A light-emitting device package including: a package main body including a cavity and a lead frame including a mounting portion disposed in the cavity and a plurality of terminal portions; a light-emitting device chip mounted on the mounting portion; a plurality of bonding wires for electrically connecting the plurality of terminal portions and the light-emitting device chip; a light-transmitting encapsulation layer filled in the cavity; and a light-transmitting cap member disposed in the cavity and blocking the encapsulation layer to contact the plurality of bonding wires.

Light emitting device package

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Wafer-level light emitting diode package and method of fabricating the same

Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.

Semiconductor light emitting diodes having reflective structures and methods of fabricating same

A flip-chip electrode light-emitting element formed by multilayer coatings where a translucent conducting layer and a highly reflective metal layer acts as flip-chip electrode for enhancing the LED luminous efficiency. The flip-chip electrode light-emitting element includes a translucent substrate, a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, and an intermediate layer adapted to support the inverted semiconductor die structure on a submount. The flip-chip electrode formed by multiplayer coatings includes a current-spreading transparent conducting layer formed on a top side of the second type semiconductor layer, a highly reflective metal layer formed on a top side of the transparent conducting layer, a metallic diffusion barrier layer formed on a top side of the highly reflective metal layer, and a bonding layer electrically coupled to the intermediate layer and formed on a top side of the barrier layer. Moreover, an ohmic contact layer is formed on the transparent conducting layer. And a passivation layer encloses the die structure for insulating p/n interface and for avoiding the creation of the leakage current.

Flip-chip electrode light-emitting element formed by multilayer coatings

PROBLEM TO BE SOLVED: To provide a luminous unit that uses a multilayer compound metallic coating layer with high luminous efficiency that is equipped with current dispersion and high-reflectance facilities. SOLUTION: A chip structure 40 is equipped with a single layer Group III nitride-based compound semiconductor chip structure 40 and packaging submount 60. The single layer Group III nitride compound semiconductor chip structure 40 comprises a translucent substrate 30, primary configuration semiconductor layer 41 combined with the translucent substrate 30 and formed on the surface of the translucent substrate 30, primary electrode 42 formed on the partial surface of the primary configuration semiconductor layer 41, prime mover layer 43 formed on the surface of the primary configuration semiconductor layer 41 for the purpose of avoiding the coverage of the primary electrode 42, secondary configuration semiconductor layer 44 formed on the surface of the prime mover layer 43, and secondary electrode 45 formed on the surface of the secondary configuration layer 44. Meanwhile, the packaging submount 60 comprises at least two conductive trace lines 61 that cope with the primary electrode 42 and secondary electrode 45 separately. The chip structure 40 is combined with the packaging submount 60 through an interlayer by a reversing flip chip method. COPYRIGHT: (C)2006,JPO&NCIPI

Luminous unit that uses multilayer compound metallic coating layer as flip chip electrode

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Flip-chip electrode light-emitting element formed by multilayer coatings

Luminous unit that uses multilayer compound metallic coating layer as flip chip electrode