Chi-I Lang

TL;DR: In this article, a low dielectric constant film with silicon-carbon bonds and dielectrics constant of about 30 or less is provided, and the carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms.

TL;DR: A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power levels from about 20W to 160W was presented in this article.

TL;DR: In this paper, a method for forming thin polymer layers having low dielectric constants on semiconductor substrates is presented, which includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseus with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon-carbon double bonds.

TL;DR: In this paper, methods for depositing a silicon carbide barrier layer having significantly reduced current leakage are described, where the barrier layer may be a barrier or part of a barrier bilayer that also includes a barrier layer.