Chetan Gupta
Indian Institute of Technology Kanpur
35 Papers
89 Citations
Chetan Gupta is an academic researcher from Indian Institute of Technology Kanpur. The author has contributed to research in topics: Flicker noise & Genus (mathematics). The author has an hindex of 6, co-authored 30 publications. Previous affiliations of Chetan Gupta include University of California, Berkeley.
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Papers
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
Harshit Agarwal,Chetan Gupta,Ravi Goel,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Juan Pablo Duarte,Huan-Lin Chang,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +10 more
TL;DR: In this article, a BSIM-based compact model for a high-voltage MOSFET is presented, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect.
37
Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model
Harshit Agarwal,Chetan Gupta,Pragya Kushwaha,Chandan Yadav,Juan P. Duarte,Sourabh Khandelwal,Chenming Hu,Yogesh Singh Chauhan +7 more
TL;DR: In this article, an analytical model of threshold voltage for bulk MOSFETs is developed, which is derived from the physical charge-based core of BSIM6 model, taking into account short channel effects, and is used in commercial SPICE simulators for operating point information.
25
Anomalous Transconductance in Long Channel Halo Implanted MOSFETs: Analysis and Modeling
TL;DR: An analytical model, based on the equivalent conductance of the halo device, is developed to understand the anomalous behavior of transconductance in halo implanted MOSFET for linear and saturation regions across both gate and body biases.
18
Analysis and Modeling of Temperature and Bias Dependence of Current Mismatch in Halo-Implanted MOSFETs
TL;DR: In this paper, an analytical model that accurately captures anomalous matching characteristics of drain current in a halo-implanted MOSFET across bias, geometry, and temperature is presented.
14
Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications
TL;DR: In this article, an improved physical equivalent circuit was derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network, which was implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer aided design device simulations and experimental data.
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