Chenyang Guo
Chinese Academy of Sciences
45 Papers
103 Citations
Chenyang Guo is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Spintronics & Magnetization. The author has an hindex of 10, co-authored 34 publications.
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Papers
Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2
Xiao Wang,Jian Tang,Xiuxin Xia,Xiuxin Xia,Congli He,Junwei Zhang,Junwei Zhang,Yizhou Liu,Caihua Wan,Chi Fang,Chenyang Guo,Wenlong Yang,Yao Guang,Xiaomin Zhang,Hongjun Xu,Jinwu Wei,Mengzhou Liao,Xiaobo Lu,Jiafeng Feng,Xiaoxi Li,Xiaoxi Li,Yong Peng,Hongxiang Wei,Rong Yang,Dongxia Shi,Xixiang Zhang,Zheng Han,Zheng Han,Zhidong Zhang,Zhidong Zhang,Guangyu Zhang,Guoqiang Yu,Xiufeng Han +32 more
TL;DR: In this paper, a bilayer structure of Fe3GeTe2/Pt was proposed to switch the magnetization from one state to another electrically by spin-orbit torques (SOTs).
306
•Posted Content
Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2
Xiao Wang,Jian Tang,Xiuxin Xia,Xiuxin Xia,Congli He,Junwei Zhang,Junwei Zhang,Yizhou Liu,Caihua Wan,Chi Fang,Chenyang Guo,Wenlong Yang,Yao Guang,Xiaomin Zhang,Hongjun Xu,Jinwu Wei,Mengzhou Liao,Xiaobo Lu,Jiafeng Feng,Xiaoxi Li,Xiaoxi Li,Yong Peng,Hongxiang Wei,Rong Yang,Dongxia Shi,Xixiang Zhang,Zheng Han,Zheng Han,Zhidong Zhang,Zhidong Zhang,Guangyu Zhang,Guoqiang Yu,Xiufeng Han +32 more
TL;DR: A bilayer structure of Fe3GeTe2/Pt is devised, in which the magnetization of few-layered Fe3 GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer.
220
High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2
Hongjun Xu,Jinwu Wei,Hengan Zhou,Jiafeng Feng,Teng Xu,Haifeng Du,Congli He,Yuan Huang,Junwei Zhang,Yizhou Liu,Han-Chun Wu,Chenyang Guo,Xiao Wang,Yao Guang,Hongxiang Wei,Yong Peng,Wanjun Jiang,Guoqiang Yu,Xiufeng Han +18 more
TL;DR: A manufacturable recipe is developed to fabricate large-area thin films of PtTe2 , a type-II Dirac semimetal, to study their capability of generating SOT and it is demonstrated that the SOT from PtTe1 layer can switch a perpendicularly magnetized CoTb layer efficiently.
171
Magnetic memory driven by topological insulators.
Hao Wu,Aitian Chen,Peng Zhang,Haoran He,John Nance,Chenyang Guo,Julian Sasaki,Takanori Shirokura,Pham Nam Hai,Pham Nam Hai,Bin Fang,Seyed Armin Razavi,Kin Fai Ellick Wong,Yan Wen,Yinchang Ma,Guoqiang Yu,Gregory P. Carman,Xiufeng Han,Xixiang Zhang,Kang L. Wang +19 more
TL;DR: In this paper, the authors demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random access memory (SOT-MRAM).
Creating zero-field skyrmions in exchange-biased multilayers through X-ray illumination
Yao Guang,Iuliia Bykova,Yizhou Liu,Guoqiang Yu,Eberhard Goering,Markus Weigand,Joachim Gräfe,Se Kwon Kim,Se Kwon Kim,Junwei Zhang,Hong Zhang,Z. R. Yan,Caihua Wan,Jiafeng Feng,Xiao Wang,Chenyang Guo,Hongxiang Wei,Yong Peng,Yaroslav Tserkovnyak,Xiufeng Han,Gisela Schütz +20 more
TL;DR: This work demonstrates the creation of individual skyrmions at zero-field in an exchange-biased magnetic multilayer with exposure to soft X-rays and envision that X-ray could serve as a versatile tool for local manipulation of magnetic orders.