Chenghao Wang
5 Papers
18 Citations
Chenghao Wang is an academic researcher. The author has contributed to research in topics: Insulated-gate bipolar transistor & Composite number. The author has an hindex of 2, co-authored 3 publications.
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Papers
A Power Loss Calculation Method of IGBT Three-Phase SPWM Converter
Rui Wu,Jia Liang Wen,Jian Han,Zhongyuan Chen,Quanqing Wei,Na Jia,Chenghao Wang +6 more
- 06 Jan 2012
TL;DR: In this paper, an improved method to describe power losses in IGBT converters is proposed, which includes dependency of voltage, current and temperature, and it could be fast and accurate.
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Multifunctional flexible graphene oxide/bacterial cellulose composite paper platforms for realtime monitoring sweat and strain in wearable devices
Chenghao Wang,Rui Wu,Lei Wang,Xiaohui Wang +3 more
TL;DR: Researchers develop a multifunctional, flexible paper-based sensor for real-time monitoring of sweat and strain, featuring a honeycomb structure, electrostatic enrichment, and controlled joule heating for simultaneous pH and movement analysis with enhanced sensitivity.
7
Fabrication of Robust Paper-Based Electronics by Adapting Conventional Paper Making and Coupling with Wet Laser Writing
Chenghao Wang,Zhiling Zhao,Rui Wu,Xiaowen Shi,Gregory F. Payne,Xiaohui Wang +5 more
TL;DR: In this article , a stable nonconducting composite of graphene oxide (GO; 30%) and cellulose (70%) was created using wet laser writing, and the patterned region (Au NPs/rGO/cellulose) showed a 200-fold increase in conductivity compared to the unpatterned region.
7
Patent
Insulated gate bipolar transistor (IGBT) series valve trigger monitoring system and communication method thereof
Jialiang Wen,Jian Han,Wang Zhixia,Yu Quanqing,Zhongyuan Chen,Rui Wu,Na Jia,Chenghao Wang,Gao Xuemin +8 more
- 25 Apr 2012
TL;DR: In this paper, a valve-base electronic equipment (VBE) and an IGBT driving unit are connected with each other through an optical fiber, and a trigger signal and state return signal communication method is supplied between the VBE and the IGBT.
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Patent
Series circuit based on inverse parallel of insulated gate bi-polar transistor (IGBT) and silicon carbide (SiC) avalanche diode
Rui Wu,Jialiang Wen,Zhongyuan Chen,Jian Han,Chenghao Wang +4 more
- 04 Jul 2012
TL;DR: In this paper, a series circuit based on the inverse parallel of an insulated gate bi-polar transistor (IGBT) and a silicon carbide (SiC) avalanche diode was proposed to prevent the use of complicated gate driving control and dv/dt control.
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