In this review, recent trends in microelectronics packaging reliability are summarized. We review the technology from early packaging concepts, including wire bond and BGA, to advanced techniques used in HI schemes such as 3D stacking, interposers, fan-out packaging, and more recently developed silicon interconnect fabric integration. This review includes approaches for both design modification studies and packaged device validation. Methods are explored for compatibility in new complex packaging assemblies. Suggestions are proposed for optimizations of the testing practices to account for the challenges anticipated in upcoming HI packaging schemes.

Modern Trends in Microelectronics Packaging Reliability Testing

Bond properties were performed on Ag-2.35Au-0.7Pd-0.2Pt-0.1Cu alloy wire with a diameter of 25 µm under different process parameters. The effects of electrical flaming off (EFO) current and EFO time on the deformability of the free air ball (FAB) were investigated using scanning electron microscopy (SEM), as well as the effects of ultrasonic power and bonding force on the bond characteristic. The experimental results show that FAB grows from a preheated tip to a small ball, a regular ball, and finally to a golf ball with increasing either the EFO current or the EFO time, and the FAB presents an optimal shape at 25 mA and 650 μs. Moreover, a nonlinear relationship between FAB diameter and EFO time is obtained at an EFO current of 25 mA, which could be expressed by a cubic equation. Further, at a constant bonding force, as the ultrasonic power increased, the mashed ball diameter grew larger and larger, the capillary hole imprint became more and more obvious, and the tail width also increased, and vice versa. The optimal ultrasonic power and bonding force are 70 mW and 45 gf for ball bonding and 90 mW and 75 gf for wedge bonding, respectively. Finally, for all the bonded wire samples prepared under optimal process parameters, no ball and wedge bond lifts happened after the destructive pull test, and full intermetallic compound coverage with perfect morphology occurred on the bond pad after the ball shear test, which meant that the bonded wire samples had high bond strength and hence improved the reliability of microelectronic products. It provided technical support for the reliability research of Pt-containing Ag-based bonding alloy wires.

Effects of Process Parameters on Bond Properties of Ag-2.35Au-0.7Pd-0.2Pt-0.1Cu Alloy Wire

Wire-bonding technology is the most commonly used chip interconnection technology in microelectronic packaging. Metal bonding wire is the key material for wire bonding and plays an important role in the reliability of electronic devices. In recent years, palladium-plated copper (PdCu) bonding wire has been widely used because of its low cost, good electrical and thermal conductivity, the fact that it is not easy to oxidize, and its high reliability. Therefore, it is necessary to review its research progress. In this paper, the preparation and application of palladium-plated copper bonding wire are reviewed. Firstly, the preparation methods of electroplating, electroless plating, and direct plating are introduced. Secondly, the factors affecting the distribution of Pd in free air balls and bonding interfaces, the effect of Pd on the formation and growth of intermetallic compounds in PdCu wire, stitch bond, and reliability of PdCu wire are summarized and analyzed in the application process. Finally, its development prospect is prospected. Hopefully, this review can help readers to have a comprehensive understanding of the preparation and application of palladium-plated copper bonding wires, and can accelerate the promotion of its application in more fields in the future.

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

The ongoing trend towards miniaturization and increased packaging density has exacerbated the reliability problem of Au-Al heterogeneous metal bonding structures in high-temperature environments, where extreme temperatures and high current pose a serious challenge. In order to address this issue, the present study aims to investigate the electromigration reliability of Au-Al bonding by comparing the conventional heterogeneous contacts with OPM structures, which are homogeneous contacts. A novel bonding layout was developed to precisely detect the resistance and obtain stage changes in electromigration. The experimental results demonstrated that the relative resistance shift of Au-Al bonding at 250 °C was 98.7%, while CrAu and NiPdAu OPM structures exhibited only 46.1% and 2.93% shifts, which suggests that the reliability of OPM structures was improved by a factor of 2.14 and 33.6, respectively. The degradation of Au-Al bonding was attributed to the large cracks observed at the bonding interface and lateral consumption of Al elements. In contrast, OPM structures only exhibited tiny voids and maintained a better bonding state overall, indicating that homogeneous metal contacts have better immunity to electromigration. Furthermore, this study also observed the polarity effect of electromigration and analyzed the impact of NiPdAu thickness on reliability. Overall, this research provides a novel approach and an insightful theoretical reference for addressing the bottleneck of high-temperature electromigration reliability in high-temperature sensor packaging.

/pdf/analysis-of-degradation-of-electromigration-reliability-of-2c8upxx8.pdf

Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method

The replacement of gold bonding wire with silver bonding wire can significantly reduce the cost of wire bonding. This paper provides a comprehensive overview of silver wire bonding technology. Firstly, it introduces various types of silver-based bonding wire currently being studied by researchers, including pure silver wire, alloy silver wire, and coated silver wire, and describes their respective characteristics and development statuses. Secondly, the development of silver-based bonding wire in manufacturing and bonding processes is analyzed, including common silver wire manufacturing processes and their impact on silver wire performance, as well as the impact of bonding parameters on silver wire bonding quality and reliability. Subsequently, the reliability of silver wire bonding is discussed, with a focus on analyzing the effects of corrosion, electromigration, and intermetallic compounds on bonding reliability, including the causes and forms of chlorination and sulfurization, the mechanism and path of electromigration, the formation and evolution of intermetallic compounds, and evaluating their impact on bonding strength and reliability. Finally, the development status of silver wire bonding technology is summarized and future research directions for silver wire are proposed.

A Review of Silver Wire Bonding Techniques

Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

Research Progress on Bonding Wire for Microelectronic Packaging

The effects of various drawing parameters and annealing processes on the structure and properties of Cu-Ag wires, containing 1 wt% silver, were investigated using specialized equipment including fine wire-drawing machines, very fine wire-drawing machines, heat treatment equipment, tensile testing machines, microcomputer-controlled electronic universal testers, resistance testers, and scanning electron microscopes. The results revealed that continuous drawing of Cu-1%Ag alloy wires led to elongation of the grains, resulting in a uniform and tightly fibrous microstructure. Moreover, the tensile strength of the alloy wire increased from 670 MPa to 783.9 MPa after a single pass with a deformation of 14%. Subsequently, when the wire was drawn at a speed of 500 m/min, the tensile strength further increased to 820.1 MPa. After annealing the Փ0.08 mm Cu-1% Ag alloy wire, an increase in annealing temperature up to 500 °C resulted in the wire’s tensile strength decreasing from 820.1 MPa to 377.5 MPa. Simultaneously, the elongation increased from 1.94% to 15.21%, and the resistivity decreased from 1.931 × 10−8 Ω·m to 1.723 × 10−8 Ω·m. Additionally, when annealing was conducted at a rate of 80 m/min, the wire resistivity dropped to 1.635 × 10−8 Ω·m.

Study on the Effect of Cold Deformation and Heat Treatment on the Properties of Cu-Ag Alloy Wire

The effects of drawing parameters and annealing process on the properties and microstructure of single crystal copper wire are studied using a wire-drawing machine, heat-treatment equipment, microcomputer-controlled electronic universal tester, resistance tester, and scanning electron microscope. The results show that, after drawing the single-crystal copper wire with a single-pass deformation of 14%, the grains elongate along the tensile direction, tensile strength increases from 500.83 MPa to 615.5 Mpa, and resistivity changes from 1.745 × 10−8 Ω·m to 1.732 × 10−8 Ω·m. After drawing at a drawing rate of 500 m/min, the degree of grain refinement increases and tensile strength increases from 615.5 Mpa to 660.26 Mpa. When a copper wire of Φ0.08 mm is annealed, its tensile strength decreases from 660.26 Mpa to 224.7 Mpa, and elongation increases from 1.494% to 19.87% when the annealing temperature increases to 400 °C. When the annealing temperature increases to 550 °C, the tensile strength and elongation decrease to 214.4 MPa and 12.18%, respectively.

Processing and Properties of Single-Crystal Copper Wire

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Research Progress on Bonding Wire for Microelectronic Packaging

Study on the Effect of Cold Deformation and Heat Treatment on the Properties of Cu-Ag Alloy Wire

Processing and Properties of Single-Crystal Copper Wire