Cheng Lin Tsai
University of Illinois at Urbana–Champaign
7 Papers
86 Citations
Cheng Lin Tsai is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Raman spectroscopy & Carbon nanotube. The author has an hindex of 6, co-authored 6 publications.
Chat about Author
Papers
Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes
TL;DR: It is shown that both metallic and semiconducting CNTs effectively switch AlOx bits between memory states with high and low resistance, which is essential for understanding the ultimate scaling limits of resistive random access memory at single-nanometer bit dimensions.
Layer-by-Layer Transfer of Multiple, Large Area Sheets of Graphene Grown in Multilayer Stacks on a Single SiC Wafer
Sakulsuk Unarunotai,Sakulsuk Unarunotai,Justin Koepke,Cheng Lin Tsai,Frank Du,Cesar Chialvo,Yuya Murata,Richard T. Haasch,Ivan Petrov,Nadya Mason,Moonsub Shim,Joseph W. Lyding,John A. Rogers +12 more
TL;DR: Graphene crossbar structures fabricated in stacked configurations demonstrate the versatility of the procedures and sheet resistances determined from measurements of four point probe devices were found to be ∼2 kΩ/square, close to expectation.
76
Temperature and Gate Voltage Dependent Raman Spectra of Single-Layer Graphene
TL;DR: The more negative χ(G) value than theoretical expectations may be explained by interactions with the substrate reducing the lattice thermal expansion contribution to the temperature dependence of G-band frequency, which may also be responsible for zero-charge, room-temperature G- band line width increase and 2D- band frequency downshift.
48
Manifestation of Kohn Anomaly in 1/f Fluctuations in Metallic Carbon Nanotubes
TL;DR: The results suggest that the competition between zone-center and zone-boundary phonon scattering is the underlying origin of the large enhancement and resonance-like behavior of 1/f noise.
Self-aligned Cu etch mask for individually addressable metallic and semiconducting carbon nanotubes.
TL;DR: Unlike electrical breakdown methods, this approach allows the selection of the single most conducting metallic CNT from an array of as-grown CNTs with average resistance ∼14 times lower than that of as -fabricated single metallic C NTs.
6