Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration Since the discovery of hafnium–zirconium oxide (HZO) with high ferroelectricity (even at a thickness of several nanometers) that can be fabricated by a complementary metal–oxide–semiconductor-compatible process, FeFETs have emerged as devices with great potential In this article, the basic principles of the FeFET and the design strategies for state-of-the-art FeFETs will be discussed FeFETs using Pb(ZrxTi1−x)O3, polyvinylidene fluoride, HZO, and two-dimensional materials are emphasized FeFETs, ferroelectric semiconductor field effect transistors, and metal–ferroelectric–insulator–semiconductor structures to which those materials can be applied are introduced, and their exotic performances are investigated Finally, the limitations of these devices’ current performance and the potential of these materials are presented

Ferroelectric field effect transistors: Progress and perspective

Simulation of biological visual perception has gained considerable attention. In this paper, an optoelectrical In2O3 transistor array with a negative photoconductivity behavior is designed using a side-gate structure and a screen-printed ion-gel as the gate insulator. This paper is the first to observe a negative photoconductivity in electrolyte-gated oxide devices. Furthermore, an artificial visual perception system capable of self-adapting to environmental lightness is mimicked using the proposed device array. The transistor device array shows a self-adaptive behavior of light under different levels of light intensity, successfully demonstrating the visual adaption with an adjustable threshold range to the external environment. This study provides a new way to create an environmentally adaptive artificial visual perception system and has far-reaching significance for the future of neuromorphic electronics.

Artificial Vision Adaption Mimicked by an Optoelectrical In2O3 Transistor Array.

Abstract Photonic computing and neuromorphic computing are attracting tremendous interests in breaking the memory wall of traditional von Neumann architecture. Photonic memristors equipped with light sensing, data storage, and information processing capabilities are important building blocks of optical neural network. In the recent years, two-dimensional materials (2DMs) have been widely investigated for photonic memristor applications, which offer additional advantages in geometry scaling and distinct applications in terms of wide detectable spectrum range and abundant structural designs. Herein, the recent progress made toward the exploitation of 2DMs beyond graphene for photonic memristors applications are reviewed, as well as their application in photonic synapse and pattern recognition. Different materials and device structures are discussed in terms of their light tuneable memory behavior and underlying resistive switching mechanism. Following the discussion and classification on the device performances and mechanisms, the challenges facing this rapidly progressing research field are discussed, and routes to realize commercially viable 2DMs photonic memristors are proposed.

/pdf/2d-photonic-memristor-beyond-graphene-progress-and-prospects-2tz3birt5e.pdf

2D photonic memristor beyond graphene: progress and prospects

Recent advances in multi-mode haptic feedback technologies towards wearable interfaces

Advances in smart and wearable devices are driving innovations in multifunctional flexible materials at a tremendous pace. Here, drawing support from the unique flexible fluorophlogopite mica platform, we present a promising all-inorganic bendable Mn-modified 0.65(0.94Na0.5Bi0.5TiO3-0.06BaTiO3)-0.35SrTiO3 (NBBST) film with dual use in electrocaloric (EC) refrigeration and energy storage via a cost-effective transfer-free process. An appreciable room-temperature EC effect with adiabatic temperature change of 12 K and isothermal entropy of 18 J K-1 kg-1 was realized in the NBBST film, which benefits from the large change in dipolar ordering near depolarization temperature. Also, the film exhibits a broad operating temperature span over 25 °C because of its relaxor feature. Most importantly, the film can maintain a high EC performance either under bending deformation at 5 mm radius or after undergoing 104 bending-unbending cycles. Meanwhile, the flexible NBBST film possesses good energy storage property with a recoverable energy density of 56 J cm-3 and an efficiency of 66%. This is the first example of a lead-free all-inorganic multifunctional film capacitor toward the flexible EC refrigeration and energy storage devices. This work shows bright prospects in the emerging flexible e-market.

Toward Multifunctional Electronics: Flexible NBT-Based Film with a Large Electrocaloric Effect and High Energy Storage Property

DOI: 10.1002/aelm.201900458 and weak charge storage capability with the size reduction.[4–7] To this end, ferroelectric random access memory (FeRAM) becomes one of the growing number of alternative technologies, which shows great advantages referring to the faster write performance and much greater maximum read/write endurance.[8,9] Traditional FeRAM is in a single capacitance structure, composed of ferroelectric (FE) materials with spontaneous polarization and top/bottom electrodes. It achieves two stable nonvolatile states as “0” and “1” to implement information storage with the application of electric fields.[10–13] Despite the great promise it holds, the commercial prospect of FeRAM is hampered by virtue of low integration. In particular, the read operation of FeRAM is destructive and reprogramming is needed after each readout process, resulting in high power consumption and prolonged readout time.[13,14] While, the drawbacks of a single capacitor-type FeRAM can be ameliorative if the device structure replaced by field effect transistor (FET), which benefits from its nondestructive readout operation and excellent compatibility with the current complementary metal-oxide-semiconductor technology.[15–18] By this means, the FE materials, served as gate insulator, are combined with semiconductors to form a synergistic heterostructure system with novel functionalities. Relative to conventional semiconductors, 2D ones, such as transition metal dichalcogenides (TMDs)[19] and black phosphorus (BP),[20,21] are more suitable to construct of synergistic heterostructure devices. On one hand, 2D materials enable versatile heterostructure integration with other 1D, 2D, and 3D counterparts through van de Waals coupling. More significantly, atomically thin characteristic of 2D materials is prone to high integration density and provides convenience for gating tunability. Lead zirconate titanate (PZT)-gated few-layer graphene have been previously reported to process an extremely high mobility of μ ∼ 7 × 104 cm2 V−1 s−1.[22] It has been also reported that FE material as gating dielectric can tune the transport behavior and improve electrical performance of the 2D FETs.[23–26] Thereby, the combination of 2D semiconductors and FE materials has potential to provide an excellent platform Ferroelectric-field-effect-transistor (FeFET) memory, characterized by its nonvolatile, nondestructive readout operation and low power consumption, has attracted tremendous attention in the development of next-generation random-access memory. However, the electrical reading processes in conventional FeFETs may attenuate the ferroelectric (FE) polarization and lead to readout crosstalk. A photoelectric-type FeFET memory with alternative readout through 2D black phosphorus (BP)/lead zirconate titanate (PZT) heterostructures is developed. Based on charge-mediated electric-field control, a unique polarization-dependent photoresponse is observed, resulting in both positive photoconductivity (PPC) and negative photoconductivity (NPC) in a single device element via FE gating. This enables a nonvolatile photoelectric memory working in a novel “electrical writing-optical reading” process mode. Furthermore, the device exhibits a reliable data retention (over 3.6 × 103 s) and fatigue (exceeding 500 cycles) performance with extremely low energy consumption (driving voltage <10 mV). The demonstrated BP/PZT heterostructure memory devices show a pathway to high-performance photoelectric storage devices as light-activated logic gates for on-chip optical communications.

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT-Gated Black Phosphorus Transistor

Toward artificial intelligent self-cooling electronic skins: Large electrocaloric effect in all-inorganic flexible thin films at room temperature

The utility model relates to a reduce magnetism electric sensor sensing element of vibration noise, including magnetostrictive material layer, piezoelectric material layer, wherein the piezoelectric material layer includes flexible interdigital electrode, the piezoelectricity fibre, and the piezoelectricity fibre circular telegram polarization and the output signal of telecommunication are given for the positive negative pole that is used for connecting interdigital electrode to the wire. The piezoelectric material layer respectively has one deck magnetostrictive material layer from top to bottom, with the epoxy forming space sandwich structure that bonds between the three -layer. Sensing element's bending structure uses at the bonding in -process through epoxy to have certain radial cylindrical mould among the magnetism electric sensor, and the pressure that utilizes vacuum bag compression makes this structure be the solidification of curved curved attitude, under the circumstances of output same size's magnetoelectric signal, has reduced the influence of extraneous vibration to the sensor, has improved the magnetic field detection sensitivity in the practical application environment.

Reduce magnetism electric sensor sensing element of vibration noise

The invention relates to a sensitive element in a magnetoelectric sensor. The sensitive element comprises magnetostrictive material layers and a piezoelectric material layer, wherein the piezoelectric material layer comprises a flexible interdigital electrode and piezoelectric fibers, and wires are used for connecting the positive electrode and the negative electrode of the interdigital electrode to electrify and polarize the piezoelectric fibers and outputting electric signals. The two magnetostrictive material layers are arranged on the upper portion and the lower portion of the piezoelectric material layer respectively, and the three layers are bonded with epoxy resin to form a spatial sandwich structure. A bending structure of the sensitive element in the magnetoelectric sensor is formed in the way that a cylindrical mold with a certain radius is used in the bonding process through epoxy resin, and the structure is cured in a bent state with the pressure of vacuum bag compression; under the situation that magnetoelectric signals of the same magnitude are output, the influence of external vibration on the sensor is reduced, and the magnetic field detection sensitivity in the practical application environment is improved.

Magnetoelectric sensor sensitive element capable of reducing vibration noise

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Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT-Gated Black Phosphorus Transistor

Toward artificial intelligent self-cooling electronic skins: Large electrocaloric effect in all-inorganic flexible thin films at room temperature

Reduce magnetism electric sensor sensing element of vibration noise

Magnetoelectric sensor sensitive element capable of reducing vibration noise