Transition metal dichalcogenides (TMDs) are becoming significant because of their interesting semiconducting and photonic properties. In particular, TMDs such as molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), tungsten disulfide (WS2), tungsten diselenide (WSe2), titanium disulfide (TiS2), tantalum sulfide (TaS2), and niobium selenide (NbSe2) are increasingly attracting attention for their applications in solar cell devices. In this review, we give a brief introduction to TMDs with a focus on MoS2; and thereafter, emphasize the role of atomically thin MoS2 layers in fabricating solar cell devices, including bulk-heterojunction, organic, and perovskites-based solar cells. Layered MoS2 has been used as the hole-transport layer (HTL), electron-transport layer (ETL), interfacial layer, and protective layer in fabricating heterojunction solar cells. The trilayer graphene/MoS2/n-Si solar cell devices exhibit a power-conversion efficiency of 11.1%. The effects of plasma and chemical doping on the pho...

Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells.

One-dimensional photonic crystal (1DPC) sensors have emerged as contenders for traditional surface plasmon resonance sensors, owing to their potential for the detection of bigger molecules and particles due to their higher interaction volume in the sensing medium. Two-dimensional layered nanomaterials, most notably graphene and dichalcogenides (e.g., MoS2, MoSe2, WS2, and WSe2), have shown higher refractive index sensitivity because of their absorption as well as adsorption property. The proposed configuration of 1DPC presented consists of alternate layers of the aforementioned nanomaterials and silicon. The performance parameters, namely the sensitivity, resolution, quality factor, and the evanescent field penetration depth, are calculated and compared with 1DPC having poly methyl methacrylate (PMMA) in place of silicon. Increased shift in resonance angle and quality factor are observed by replacing PMMA with silicon, but at the cost of decreased resolution. Further, our results show that although the sensitivity and quality factor of the 1DPC sensor is less than that of the conventional surface plasmon resonance sensor (SPR) with a gold thin film, it has much higher resolution and penetration depth to make it suitable for large molecules.

https://www.mdpi.com/1424-8220/18/3/857/pdf

Two-Dimensional Layered Nanomaterial-Based One-Dimensional Photonic Crystal Refractive Index Sensor

The present study focuses on the synthesis of MoS2–MoO3 nanostructures via a hydrothermal method and their application in the modification of CdS photoanodes. Structural characterization reveals that with an increase in the hydrothermal reaction time the fraction of the MoS2 phase increases in the MoS2–MoO3 nanostructures, with MoS2 being dominant in the sample obtained at the maximum reaction time. TEM characterization reveals the formation of ultra thin nanosheets in the MoS2–MoO3 system. Correspondingly, the bandgaps estimated from the Tauc plot analysis indicate a bandgap tuning from 2.40 eV to 1.73 eV for these Mo-nanostructures. The surfaces of spray deposited nanostructured CdS thin films were further modified with these Mo-nanostructures via a very simple and economic chemical impregnation method. The CdS photoanodes modified with the MoS2–MoO3 nanosheets exhibit the highest PEC performance which is 4 times the photocurrent of bare CdS photoanodes. In addition, the stability of the modified photoanodes is enhanced to more than 8 hours compared to a few minutes for bare and photocorrosive CdS. The improved PEC performance is attributed to the formation of the n-CdS/p-MoS2 junction that suppresses the undesirable electron–hole recombination process and thus improves the charge transfer process. A solar-to-hydrogen conversion efficiency of 1.9% is reported for the MoS2–MoO3 nanosheets modified CdS photoanode.

Ultrathin MoS2–MoO3 nanosheets functionalized CdS photoanodes for effective charge transfer in photoelectrochemical (PEC) cells

Preparation of a novel Fe2O3-MoS2-CdS ternary composite film and its photoelectrocatalytic performance

As cheap and abundant materials, transitional metal dichalcogenide monolayers have attracted increasing interests for their application as catalysts in hydrogen production. In this work, the hydrogen evolution reduction of doped vanadium disulfide monolayers is investigated based on first-principles calculations. We find that the doping elements and concentration affect strongly the catalytic ability of the monolayer. We show that Ti-doping can efficiently reduce the Gibbs free energy of hydrogen adsorption in a wide range of hydrogen coverage. The catalytic ability of the monolayer at high hydrogen coverage can be improved by low Ti-density doping, while that at low hydrogen coverage is enhanced by moderate Ti-density doping. We further show that it is much easier to substitute the Ti atom to the V atom in the vanadium disulfide (VS2) monolayer than other transitional metal atoms considered here due to its lowest and negative formation energy. It is expected that the Ti-doped VS2 monolayer may be applicable in water electrolysis with improved efficiency.

/pdf/effect-of-doping-on-hydrogen-evolution-reaction-of-vanadium-93goxy3ij1.pdf

Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer.

Molybdenum disulfide (MoS2)/cadmium sulfide (CdS) heterojunction solar cells were successfully synthesized via chemical bath deposition (CBD) and chemical vapor deposition (CVD). The as-grown CdS film on a fluorine tin oxide (FTO) substrate deposited by CBD is continuous and compact. The MoS2 film deposited by CVD is homogeneous and continuous, with a uniform color and a thickness of approximately 10 nm. The optical absorption range of the MoS2/CdS heterojunction covers the visible and near-infrared spectral regions of 350 to 800 nm, which is beneficial for the improvement of solar cell efficiency. Moreover, the MoS2/CdS solar cell exhibits good current-voltage (I-V) characteristics and pronounced photovoltaic behavior, with an open-circuit voltage of 0.66 V and a short-circuit current density of 0.227 × 10-6 A/cm2, comparable to the results obtained from other MoS2-based solar cells. This research is critical to investigate more efficient and stable solar cells based on graphene-like materials in the future.

/pdf/fabrication-and-investigation-of-the-optoelectrical-1nymjh9shm.pdf

Fabrication and investigation of the optoelectrical properties of MoS2/CdS heterojunction solar cells.

We designed MoS2/SiO2 one-dimensional (1D) photonic crystal using the concept of photonic crystal and investigated the light transfer properties by means of transfer-matrix method. We found that the transfer properties of photonic crystal can be modified by the period of photonic crystal, the thickness of dielectric layer, and the number of the defect layers. The number of photonic band gaps (PBGs) reduces with the decrease of the thickness of dielectric layer, and the position of PBGs in the spectra rapidly moves to short wavelength direction. For defect photonic crystal, the width of the PBGs obviously become larger, and the transmittance spectra oscillate more intensely, similar to the characteristics of Bragg gratings. These properties will give good instructor for the preparation of 1D MoS2 quantum well light emitting devices and solar cells.

Study on the Optical Transmission Properties of One-Dimensional Photonic Crystal of MoS2

We report the photoelectronic properties of MoS2/CdS heterojunction films fabricated via rapid chemical vapor deposition (CVD) and chemical bath deposition (CBD). Silver-doped MoS2 thin films were deposited on prepared indium tin oxide substrates via CVD, and then CdS films were prepared on the surfaces of the MoS2 thin films via CBD. The MoS2/CdS heterojunction has strong optical electronic properties. It shows an open-circuit voltage of 0.66 V and a short-circuit current density of 0.227 × 10-6 A/cm2 under illumination by a 100 mW light source, indicating that the device has good current–voltage (I–V) characteristics and pronounced photovoltaic behavior and can be used to fabricate high-quality heterojunction thin film solar cells. Keywords-MoS2/CdS heterojunction film; optical absorption; I-V; photovoltaic effect

/pdf/photoelectronic-properties-of-mos2-cds-thin-film-50cabv3qnc.pdf

Photoelectronic Properties of MoS2/CdS Thin Film Heterojunction

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Fabrication and investigation of the optoelectrical properties of MoS2/CdS heterojunction solar cells.

Study on the Optical Transmission Properties of One-Dimensional Photonic Crystal of MoS2

Photoelectronic Properties of MoS2/CdS Thin Film Heterojunction