Chen Wang
Beijing University of Technology
8 Papers
28 Citations
Chen Wang is an academic researcher from Beijing University of Technology. The author has contributed to research in topics: Thin film & Charge carrier. The author has an hindex of 3, co-authored 8 publications.
Chat about Author
Papers
A current transient method for trap analysis in BiFeO3 thin films
Hui Zhu,Ying Yang,Xiao Meng,Anquan Jiang,Zilong Bai,Xiang Zheng,Lei Jin,Chen Wang,Shiwei Feng +8 more
TL;DR: In this article, the trap characteristics in BiFeO3 thin films were studied, which display a resistance switching effect caused by trapping/detrapping of charge carriers, indicating a close relationship between the escape frequency of the charge carriers and the structure ordering caused by polarization and filling of the traps.
18
Modulation of the resistive switching of BiFO3 thin films through electrical stressing
Ying Yang,Hui Zhu,Daping Chu,Kai Liu,Yuelin Zhang,Minghui Pei,Shiwei Feng,Lei Jin,Chen Wang,Jie Liu,Li Rui,Si Wang +11 more
TL;DR: In this paper, the resistive switching of Au/BiFeO3/SrRuO3 samples was shown to be controllable by using a thermal treatment and an electrical stressing method.
Change in trap characteristics during fatigue of Au/BiFeO3/SrRuO3
TL;DR: In this paper, the change of trap characteristics during fatigue cycling process in Au/BiFeO3/SrRuO3 was studied, where the resistive switching effect of the structure was caused by the trapping/detrapping of charge carriers.
4
Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO 3 /Nb:SrTiO 3 heterostructure
Ying Yang,Hui Zhu,Xiao Meng,Lei Jin,Chen Wang,Si Wang,Shiwei Feng,Chunsheng Guo,Yamin Zhang +8 more
- 01 Oct 2018
TL;DR: In this article, two resistive switching polarities were observed for the BiFeO 3 thin films were deposited on Nb-doped SrTiO 3 substrates by radiofrequency magnetron sputtering, and they were annealed in 760 and 1.5 Torr of oxygen, respectively.
1
Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs
Xiao Meng,Hui Zhu,Chen Wang,Ying Yang,Shiwei Feng,Yamin Zhang,Chunsheng Guo +6 more
- 06 Jun 2018
TL;DR: In this article, the authors applied an external tensile stress parallel to the 2DEG channel, causing a decrease of the kink effect and the traps behavior in AlGaN/GaN HEMT.
1