Low‐dimensional devices with different photoconductive effects attract much attention in optoelectronics. In this work, negative photoconductivity (NPC) monolayer graphene photodetectors are fabricated by chemical vapor deposition (CVD), and a positive photoconductivity (PPC) photodetector is realized by decorating perovskite FAPbI3 quantum dots prepared by a simple and cost‐effective non‐polar solvent synthesis method on a graphene surface. The graphene‐based photodetector exhibits an NPC characteristic, which is attributed to the absorption and desorption of water molecules on the graphene surface. The responsivity of the photodetector with an NPC characteristic is −0.86 A W−1 under intense ultraviolet light irradiation, and the detectivity is −2.45 × 109 Jones. The FAPbI3 quantum dots/graphene photodetector with a PPC feature has a responsivity of 8.03 A W−1 and a detectivity of 1.89 × 1010 Jones under the irradiation of ultraviolet light of 365 nm and 55.3 mW cm−2 intensity. Due to the intense light absorption of perovskite combined with the extremely high mobility of graphene, photodetectors have high exciton separation and photocurrents when the devices are irradiated by ultraviolet light. Individual photodetectors are successfully created with NPC and PPC effects; the critical analysis for the different photoconductive mechanisms is provided, which will benefit the development of future multifunctional systems.

Multifunctional and High‐Performance FAPBI
 3
 Quantum Dots/Graphene UV Photodetectors by the Modulation of Photoconductivity

In this study, we investigated the electrodeposition of stress-induced (111)-oriented nanotwin copper films using direct current in an additive-free electrolyte. We aimed to explore the effects of temperature, current density, and agitation on the formation of nanotwins. At lower temperatures, (111) orientation was induced due to the decrease in adatom surface diffusion. Additionally, higher current densities, which induced high initial residual stress, promoted the formation of (111)-oriented nanotwins, resulting in stress relaxation and a reduction in residual stress. Agitation had a negligible effect on nanotwin formation in our experiments, which were conducted in the additive-free electrolyte. Our findings provide valuable insights into the controlled formation of (111)-oriented nanotwin Cu films and their potential applications in fields requiring Cu films with superior mechanical and electrical properties, which are improved by the formation of nanotwins. By comprehending the fundamental mechanisms involved, it becomes possible to optimize electrodeposition processes for (111)-oriented nanotwin copper films. 

Electrodeposition of stress-relaxation-induced (111)-oriented nanotwin copper film by direct current in additive-free electrolyte

Deposition of N-Heterocyclic Carbenes on Reactive Metal Substrates─Applications in Area-Selective Atomic Layer Deposition

With the assistance of van der Waals (vdW) epitaxy, nanometer-thick and highly conductive gold films are deposited onto MoS2 surfaces for use as transparent anode electrodes in quantum dot light-emitting diodes (QLEDs) on poly(ethylene terephthalate) (PET) substrates. After transferring wafer-scale and monolayer MoS2 to PET substrates, 10 nm thick gold (Au) films are deposited onto the two-dimensional (2D) material surfaces as anode electrodes. Bounded only by weak vdW forces on 2D material surfaces, the diffusive Au adatoms tend to facilitate lateral growth and lead to the formation of continuous and highly conductive thin metal films in the nanometer regime. The Au film exhibits excellent tensile bending stability for its sheet resistance, which is superior to that of rigid indium-tin oxide (ITO) films on PET substrates. Thermally stable CdSe@CdZnS/ZnS QLEDs are fabricated on the PET substrate. Compared with devices fabricated on sapphire substrates, the phenomenon of sub-bandgap turn-on is observed for the flexible device. Based on our demonstrations, the high conductivity and robust durability toward substrate bending make the nanometer-thick Au film grown on 2D material surfaces a promising candidate to replace current ITO anode electrodes for flexible device applications.

Van der Waals Epitaxy of Thin Gold Films on 2D Material Surfaces for Transparent Electrodes: All-Solution-Processed Quantum Dot Light-Emitting Diodes on Flexible Substrates.

Ultrathin metal films are an essential platform for two-dimensional (2D) material compatible and flexible optoelectronics. Characterization of thin and ultrathin film-based devices requires a thorough consideration of the crystalline structure and local optical and electrical properties of the metal-2D material interface since they could be dramatically different from the bulk material. Recently, it was demonstrated that the growth of gold on the chemical vapor deposited monolayer MoS2 leads to a continuous metal film that preserves plasmonic optical response and conductivity even at thicknesses below 10 nm. Here, we examined the optical response and morphology of ultrathin gold films deposited on exfoliated MoS2 crystal flakes on the SiO2/Si substrate via scattering-type scanning near-field optical microscopy (s-SNOM). We demonstrate a direct relationship between the ability of thin film to support guided surface plasmon polaritons (SPP) and the s-SNOM signal intensity with a very high spatial resolution. Using this relationship, we observed the evolution of the structure of gold films grown on SiO2 and MoS2 with an increase in thickness. The continuous morphology and superior ability with respect to supporting SPPs of the ultrathin (≤10 nm) gold on MoS2 is further confirmed with scanning electron microscopy and direct observation of SPP fringes via s-SNOM. Our results establish s-SNOM as a tool for testing plasmonic films and motivate further theoretical research on the impact of the interplay between the guided modes and the local optical properties on the s-SNOM signal.

/pdf/scanning-near-field-optical-microscopy-of-ultrathin-gold-2vlz26gu.pdf

Scanning Near-Field Optical Microscopy of Ultrathin Gold Films

Thin Copper (Cu) films (15 nm) are deposited on different 2D material surfaces through e-beam deposition. With the assist of van der Waals epitaxy growth mode on 2D material surfaces, preferential planar growth is observed for Cu films on both MoS2 and WSe2 surfaces at room temperature, which will induce a polycrystalline and continuous Cu film formation. Relative low resistivity values 6.07 (MoS2) and 6.66 (WSe2) μΩ-cm are observed for the thin Cu films. At higher growth temperature 200 °C, Cu diffusion into the MoS2 layers is observed while the non-sulfur 2D material WSe2 can prevent Cu diffusion at the same growth temperature. By further increasing the deposition rates, a record-low resistivity value 4.62 μΩ-cm for thin Cu films is observed for the sample grown on the WSe2 surface. The low resistivity values and the continuous Cu films suggest a good wettability of Cu films on 2D material surfaces. The thin body nature, the capability to prevent Cu diffusion and the unique van der Waals epitaxy growth mode of 2D materials will make non-sulfur 2D materials such as WSe2 a promising candidate to replace the liner/barrier stack in interconnects with reducing linewidths. 

/pdf/nanometer-thick-copper-films-with-low-resistivity-grown-on-17t75j3k.pdf

Nanometer-thick copper films with low resistivity grown on 2D material surfaces

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Nanometer-thick copper films with low resistivity grown on 2D material surfaces