Strain-balanced InAs/InAs1−xSbx type-II superlattices (SLs) on GaSb substrates with 0.27 ≤ x ≤0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence (PL) up to 11.1 μm. The calculated SL bandgap energies agree with the PL peaks to within 5 meV for long-wavelength infrared samples (9.5, 9.9, and 11.1 μm) and to within 9 meV for a mid-wavelength infrared sample (5.9 μm). X-ray diffraction measurements reveal average SL mismatches of less than 0.2%, and the PL full-width-at-half-maximums increase with the mismatch, confirming the importance of strain-balancing for material quality.

Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates

We developed chip-scale remote refractive index sensors based on Rhodamine 6G (R6G)-doped polymer micro-ring lasers. The chemical, temperature, and mechanical sturdiness of the fused-silica host guaranteed a flexible deployment of dye-doped polymers for refractive index sensing. The introduction of the dye as gain medium demonstrated the feasibility of remote sensing based on the free-space optics measurement setup. Compared to the R6G-doped TZ-001, the lasing behavior of R6G-doped SU-8 polymer micro-ring laser under an aqueous environment had a narrower spectrum linewidth, producing the minimum detectable refractive index change of 4 × 10-4 RIU. The maximum bulk refractive index sensitivity (BRIS) of 75 nm/RIU was obtained for SU-8 laser-based refractive index sensors. The economical, rapid, and simple realization of polymeric micro-scale whispering-gallery-mode (WGM) laser-based refractive index sensors will further expand pathways of static and dynamic remote environmental, chemical, biological, and bio-chemical sensing.

/pdf/demonstration-of-versatile-whispering-gallery-micro-lasers-1uumh1p36h.pdf

Demonstration of versatile whispering-gallery micro-lasers for remote refractive index sensing.

InAs1–xSbx has the smallest bandgap of conventional III-V ternary alloys and thus has been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 μm) infrared (LWIR) devices since the 1950s with the most widespread use of InAs1–xSbx being for photodetectors. Current topics that have been enabled by substantial technological advances over the years include extending the wavelength of InAs1–xSbx; growth on large-area, low-cost substrates to improve manufacturability; high operating temperatures; clever device architectures, such as barrier structures, immersed lenses, and plasmonic enhancements, to improve detector performance; and radiation tolerance for space applications. This chapter includes InAs1–xSbx history, growth methods, its optical and electrical properties, detector and focal plane array performance, and, finally, applications of InAs1–xSbx-based detectors.

InAsSb-based photodetectors

InAs/InAs1-xSbx strain-balanced superlattices (SLs) on GaSb are a viable alternative to the well-studied InAs/Ga1-xInxSb
SLs for mid- and long-wavelength infrared (MWIR and LWIR) laser and photodetector applications, but the InAs/InAs1-xSbx SLs are not as thoroughly investigated Therefore, the valence band offset between InAs and InAs/InAs1-xSbx, a critical
parameter necessary to predict the SL bandgap, must be further examined to produce InAs/InAs1-xSbx SLs for devices
operational at MWIR and LWIR wavelengths The effective bandgap energies of InAs/InAs1-xSbx SLs with x = 028 -
040 are designed using a three-band envelope function approximation model Multiple 05 μm-thick SL samples are
grown by molecular beam epitaxy on GaSb substrates Structural characterization using x-ray diffraction and atomic
force microscopy reveals excellent crystalline properties with SL zero-order peak full-width-half-maximums between 30
and 40 arcsec and 20 x 20 μm2 area root-mean-square roughnesses of 16 - 27 A Photoluminescence (PL) spectra of
these samples cover 5 to 8 μm, and the band offset between InAs and InAs/InAs1-xSbx is obtained by fitting the PL peaks to
the calculated values The bowing in the valence band is found to depend on the initial InAs/InSb valence band offset
and changes linearly with x as CEv_bowing = 158x - 062 eV when an InAs/InAs1-xSbx bandgap bowing parameter of 067 eV is
assumed A fractional valence band offset, Qv = ΔEv/ΔEg, of 175 ± 003 is determined and is practically constant in the
composition range studied

Study of the valence band offsets between InAs and InAs 1-x Sb x alloys

Lattice deformation of wurtzite MgxZn1−xO alloys: An extended X-ray absorption fine structure study

A highly efficient Cu/ZnOx/ZrO2 catalyst for selective CO2 hydrogenation to methanol

InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

We performed reciprocal space mapping (RSM) and extended x-ray absorption fine structure (EXAFS) measurements to investigate the lattice structure of InP0.52Sb0.48 grown on GaAs. The RSM data reveal the existence of residual strain in the 1-μm-thick epilayer. The average vertical to horizontal lattice constant ratio, az/axy, is 1.009. We used a valence force field model to calculate the distortion energy and bond lengths of InPSb supercells with different az/axy ratio. The calculated InP and InSb bond lengths are in good agreement with the results of EXAFS. Both bond lengths are close to those in corresponding end-point binaries. We attributed the residual strain to the non-vanishing distortion energy resulting from the bond length mismatch between InP and InSb bonds.

Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs

We determined the unstrained conduction-band and valence-band edge energies of InAs1−xSbx (0.05<x<0.13) by fitting the photoluminescence peak energy of InAsSb/InAs0.67P0.23Sb0.10 quantum wells (QWs) that was measured in the temperature range 10–300 K. The results reveal that the QWs exhibit type-I band alignment. Furthermore, the valence band accounts for 65% of the energy-gap bowing of InAsSb. We propose a valence-band anticrossing (VBAC) model to explain the bowing of the valence band in InAsSb. Moreover, the spin-orbit splitting energy of InAsSb calculated by our VBAC model fits well with the experimental results reported in previous studies.

Band alignment of InAs1―xSbx (0.05<x<0.13)/InAS0.67P0.23Sb0.10 heterostructures

The mid-infrared whispering-gallery-mode disk cavities with InAs0.85Sb0.15/InAs0.53P0.23Sb0.24 multiple quantum wells active medium on a GaSb substrate were fabricated. For this material system in the mid-infrared range, fabrication techniques were developed to form the disk cavity structure. The smooth sidewalls of the disk cavities were achieved by appropriate gas mixture flow ratio of BCl3/Ar in the inductively coupled plasma-reactive ion etching. In addition, selective wet etching technique was used to form the pedestal of the disk cavity using dilute hydrofluoric acid with good selectivity. For efficient confinement of the whispering gallery modes along the radial direction, the extent of the lateral etching was carefully controlled. The processed 30-μm-diameter disk cavities were optically pumped, and the whispering gallery modes with wavelengths around 4.1 μm can be observed up to 90 K.

InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm.

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Chen-Jun Wu

Author Tools

Chat about Author