Phosphorus-containing flame retardant epoxy thermosets: Recent advances and future perspectives

Antimony selenosulfide, Sb2(S,Se)3, has attracted attention over the last few years as a light-harvesting material for photovoltaic technology owing to its phase stability, earth abundancy and low toxicity. However, the lack of a suitable material processing approach to obtain Sb2(S,Se)3 films with optimal optoelectronic properties and morphology severely hampers prospects for efficiency improvement. Here we demonstrate a hydrothermal approach to deposit high-quality Sb2(S,Se)3 films. By varying the Se/S ratio and the temperature of the post-deposition annealing, we improve the film morphology, increase the grain size and reduce the number of defects. In particular, we find that increasing the Se/S ratio leads to a favourable orientation of the (Sb4S(e)6)n ribbons (S(e) represents S or Se). By optmizing the hydrothermal deposition parameters and subsequent annealing, we report a Sb2(S,Se)3 cell with a certified 10.0% efficiency. This result highlights the potential of Sb2(S,Se)3 as an emerging photovoltaic material. Antimony chalcogenides are emerging photovoltaic materials, yet difficulties in fabricating high-quality films limit device performance. We show that hydrothermal synthesis affords good morphology and reduced defects in antimony selenosulfide films, enabling solar cells with an efficiency of 10%.

Hydrothermal deposition of antimony selenosulfide thin films enables solar cells with 10% efficiency

A liquid phosphorus-containing imidazole derivative as flame-retardant curing agent for epoxy resin with enhanced thermal latency, mechanical, and flame-retardant performances.

A review of Sb2Se3 photovoltaic absorber materials and thin-film solar cells

Review of Recent Progress in Antimony Chalcogenide‐Based Solar Cells: Materials and Devices

Flame-retarding epoxy resin with an efficient P/N/S-containing flame retardant: Preparation, thermal stability, and flame retardance

Promising Sb2(S,Se)3 Solar Cells with High Open Voltage by Application of a TiO2/CdS Double Buffer Layer

The invention discloses a method for preparing a solar cell absorption layer Sb2Se3 film based on magnetron sputtering and post-selenization. The method is characterized in that a substrate is one of a molybdenum plating film, conductive glass, soda-lime glass, silica glass and metal foil; the purity of a magnetron sputtering Sb2Se3 target material is 96-99.9%; the Sb2Se3 target material is deposited on the cleaned substrate in argon atmosphere through magnetron sputtering, and a Sb2Se3 precursor film is formed and stored in vacuum environment; the Sb2Se3 precursor film is subjected to selenylation heat treatment in selenium atmosphere, and finally the Sb2Se3 film is obtained. The preparation method of carrying out heat treatment in selenium atmosphere after carrying out magnetron sputtering on the Sb2Se3 precursor film has the advantages that the synthesized film phase is pure and single, the manufacturing technology is simple, safe and nontoxic, large-area production can be achieved, and the thickness is easy to control.

Method for preparing solar cell absorption layer Sb2Se3 film based on magnetron sputtering and post-selenization

The invention relates to the technical field of solar cell material and devices, and particularly to a method for preparing a solar cell absorbing layer CTS film through oxide nanometer particles. The method comprises the steps of synthesizing oxide nanometer particle powder which comprises copper and tin through one-step low-temperature solid-phase reaction, dispersing the oxide nanometer powder into an organic solvent, performing wet grinding for forming stable precursor slurry; cleaning the surface of a substrate, depositing the precursor slurry on the substrate for forming a copper-pin oxide precursor film; and annealing the precursor film in a sulfur (S) atmosphere or in a closed or communicated tubular furnace, thereby obtaining the absorbing layer CTS film of the invention. The method realizes preparation of the oxide precursor which comprises zinc and tin in a non-vacuum and atmosphere environment. The method has advantages of abundant and cheap synthetic raw materials, simple process, easy control, environment-friendly and safe preparation process, easy control for components of the film, effective realization of large-area preparation, and good application prospect in the field of low-cost film solar battery preparation.

Method for preparing solar cell absorbing layer CTS film through oxide nanometer particles

The invention relates to a method of preparing a gradient element of a solar cell absorbing layer copper indium sulfur selenium thin film from oxide nanoparticles. Firstly, the oxide nanoparticles containing copper and indium are synthesized by solid state reaction at low temperature to form precursor slurry. The precursor slurry is deposited on the substrate to form a copper indium oxide precursor thin film which is dried and then stored. The precursor thin film is annealed in a sulfur atmosphere and a selenium atmosphere to obtain an absorbing layer CISSe thin film according to the invention. The CISSe obtained by the annealing treatment is subjected to rapid sulfur treatment in the sulfur atmosphere to obtain a solar cell absorbing layer CuIn(S,Se)2 thin film having an S/Se composition gradient structure. The method of the invention has the advantages of simple synthesis process, uncomplicated preparation equipment, low raw material cost, high material utilization rate, large area uniformity index, thin film component and easy control over thickness, and is suitable for large-scale industrial production.

Method of preparing solar cell absorbing layer copper indium sulfur selenium thin film with gradient element

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