Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.

/pdf/nanoscale-thermal-transport-1frv881kzm.pdf

Nanoscale thermal transport

The form of energy termed heat that typically derives from lattice vibrations, i.e., phonons, is usually considered as waste energy and, moreover, deleterious to information processing. However, in this Colloquium, an attempt is made to rebut this common view: By use of tailored models it is demonstrated that phonons can be manipulated similarly to electrons and photons, thus enabling controlled heat transport. Moreover, it is explained that phonons can be put to beneficial use to carry and process information. In the first part ways are presented to control heat transport and to process information for physical systems which are driven by a temperature bias. In particular, a toolkit of familiar electronic analogs for use of phononics is put forward, i.e., phononic devices are described which act as thermal diodes, thermal transistors, thermal logic gates, and thermal memories. These concepts are then put to work to transport, control, and rectify heat in physically realistic nanosystems by devising practical designs of hybrid nanostructures that permit the operation of functional phononic devices; the first experimental realizations are also reported. Next, richer possibilities to manipulate heat flow by use of time-varying thermal bath temperatures or various other external fields are discussed. These give rise to many intriguing phononic nonequilibrium phenomena such as, for example, the directed shuttling of heat, geometrical phase-induced heat pumping, or the phonon Hall effect, which may all find their way into operation with electronic analogs.

/pdf/colloquium-phononics-manipulating-heat-flow-with-electronic-3ofg34ywrl.pdf

Colloquium : Phononics: Manipulating heat flow with electronic analogs and beyond

Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect transistor that is able to control the flow of heat exchanged by evanescent thermal photons between two bodies. By changing the gate temperature around its critical value, the heat flux exchanged between the hot body (source) and the cold body (drain) can be reversibly switched, amplified, and modulated by a tiny action on the gate. Such a device could find important applications in the domain of nanoscale thermal management and it opens up new perspectives concerning the development of contactless thermal circuits intended for information processing using the photon current rather than the electric current.

/pdf/near-field-thermal-transistor-37tvftaq5g.pdf

Near-Field Thermal Transistor

https://www3.nd.edu/~sst/teaching/AME60634/homework/2011_IJTS_Walker_Roberts_thermal_rectification_review.pdf

A review of thermal rectification observations and models in solid materials

Engineering the Thermal Conductivity of Functional Phase‐Change Materials for Heat Energy Conversion, Storage, and Utilization

The equilibrium diagram of the copper: copper oxide: oxygen system controls the conditions of formation of the cuprous oxide rectifier. The interface between the cuprous oxide and the copper from which it is formed can be studied with polarized light. Intimate contact exists for more than half the total area. The technique of preparing the rectifier has a marked influence on its characteristics. By using a method of measuring the resistance characteristic which did not cause an error due to current heating at the interface, unusual results were obtained from specimens made under various conditions. Measurement of the thermal conductance of the rectifier disclosed a new physical phenomenon, asymmetrical thermal conductance. This asymmetry is in the direction that would be expected from the electron theory of heat conduction.

The Copper Oxide Rectifier

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The Copper Oxide Rectifier