Chanwoo Yang
Samsung
53 Papers
459 Citations
Chanwoo Yang is an academic researcher from Samsung. The author has contributed to research in topics: Pentacene & Layer (electronics). The author has an hindex of 24, co-authored 51 publications. Previous affiliations of Chanwoo Yang include Pohang University of Science and Technology & Yonsei University.
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Papers
Bending-stress-driven phase transitions in pentacene thin films for flexible organic field-effect transistors
Chanwoo Yang,Jinhwan Yoon,Se Hyun Kim,Kipyo Hong,Dae Sung Chung,Kyuyoung Heo,Chan Eon Park,Moonhor Ree +7 more
TL;DR: In this article, the effects of bending strain on the structure and electrical properties of pentacene films in flexible devices were investigated and it was found that the volume fraction of bulk phase increases from 10.7% to 27% under 1.1% of tensile strain but decreases to 3.5% of compressive strain.
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Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors
Se Hyun Kim,Sooji Nam,Jaeyoung Jang,Kipyo Hong,Chanwoo Yang,Dae Sung Chung,Chan Eon Park,Woon-Seop Choi +7 more
TL;DR: In this article, the authors demonstrate the origin and mechanism of the hysteresis behavior that is frequently observed during the operation of organic field effect transistors (OFETs) based on polymer gate dielectrics.
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Effects of polymer gate dielectrics roughness on pentacene field-effect transistors
TL;DR: In this paper, the root-mean square roughness of poly(methylmethacrylate)/anodized Al2O3 dual-layer gate dielectric was investigated.
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Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics
TL;DR: In this article, a lowvoltage-operating pentacene-based organic field effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics was reported.
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Effects of polar functional groups and roughness topography of polymer gate dielectric layers on pentacene field-effect transistors
TL;DR: In this article, the effects of the polar functional groups and rough topography of the gate dielectric layer on the characteristics of pentacene field effect transistors were analyzed. But the authors did not consider the effect of the number of polar groups.
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