β-Ga2O3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent semiconducting oxide (TSO), which attracted recently much scientific and technological attention. Unique properties of that compound combined with its advanced development in growth and characterization place β-Ga2O3 in the frontline of future applications in electronics (Schottky barrier diodes, field-effect transistors), optoelectronics (solar- and visible-blind photodetectors, flame detectors, light emitting diodes), and sensing systems (gas sensors, nuclear radiation detectors). A capability of growing large bulk single crystals directly from the melt and epi-layers by a diversity of epitaxial techniques, as well as explored material properties and underlying physics, define a solid background for a device fabrication, which, indeed, has been boosted in recent years. This required, however, enormous efforts in different areas of science and technology that constitutes a chain linking together engineering, metrology and theory. The present review includes material preparation (bulk crystals, epi-layers, surfaces), an exploration of optical, electrical, thermal and mechanical properties, as well as device design / fabrication with resulted functionality suitable for different fields of applications. The review summarizes all of these aspects of β-Ga2O3 at the research level that spans from the material preparation through characterization to final devices.

https://iopscience.iop.org/article/10.1088/1361-6641/aadf78/pdf

β-Ga2O3 for wide-bandgap electronics and optoelectronics

The present review takes a semiconductor physics perspective to summarize the state-of-the art of In2O3 in relation to applications. After discussing conventional and novel applications, the crystal structure, synthesis of single-crystalline material, band-structure and optical transparency are briefly introduced before focussing on the charge carrier transport properties. The issues of unintentional n-type conductivity and its likely causes, the surface electron accumulation, and the lack of p-type conductivity will be presented. Intentional doping will be demonstrated to control the electron concentration and resistivity over a wide range, but is also subject to compensation. The control of the surface accumulation in relation to Schottky and ohmic contacts will be demonstrated. In the context of scattering mechanisms, the electron mobility and its limits will be discussed. Finally, the Seebeck coefficient and its significance will be shown, and ferromagnetic doping of In2O3 will be critically discussed. With this overview most if not all ingredients for the use of In2O3 as semiconductor material in novel or improved conventional devices will be given.

http://iopscience.iop.org/article/10.1088/0268-1242/30/2/024001/pdf

Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

The group-III sesquioxides possess material properties that render them interesting for applications such as high-power rectifiers and transistors, solar-blind UV detectors and inter-sub-band infrared detectors. Technology for growing large, single-crystalline bulk material and for wafer fabrication exists, enabling homoepitaxial growth of thin films with high crystalline quality. The bandgap can be tuned in an energy range from about 4 to 8 eV for the ternary alloys and allows growth of heterostructures with large band offset. Here, past results and recent investigations on the growth, the material properties, contact fabrication and the alloying of group-III sesquioxides are reviewed, and an overview on demonstrator devices is provided.

Group‐III Sesquioxides: Growth, Physical Properties and Devices

In${}_{2}$O${}_{3}$ and Ga${}_{2}$O${}_{3}$ are both transparent conducting oxides with advantageous properties, but differing crystal structures. Alloying the two together could permit the tuning of materials properties such as band gaps, but raises the question of what the stable crystal structure would be. Using state of the art first principles calculations, the authors predict alloy properties as a function of composition, finding the structure with the lowest formation barrier. They also report natural band alignments which can aid in the design of heterostructures.

/pdf/in-x-ga-1-x-2-o-3-alloys-for-transparent-electronics-1xufa7ndba.pdf

( In x Ga 1 − x ) 2 O 3 alloys for transparent electronics

Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions

We report on structural and optical properties of a (InxGa)2O3 thin film having a monotonic lateral variation of the indium content x (). The growth condition for each In content is similar allowing precise determination of the dependence of material properties on x. For low In content () the thin film has monoclinic crystal structure; for highest In contents () the cubic bixbyite phase is predominant. For intermediate alloying we observe additionally the rhombohedral InGaO3(II) crystallographic phase. The optical band-gap decreases systematically with increasing indium content and has a linear dependency on x for parts of the sample having the monoclinic phase, only. Further, properties of Pt Schottky diodes are reported for monoclinic (InxGa)2O3 and photo response measurements for

https://iopscience.iop.org/article/10.1088/0268-1242/30/2/024005/pdf

Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

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Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon