The growth and characterization of functional oxide thin films that are ferroelectric, magnetic, or both at the same time are reviewed. The evolution of synthesis techniques and how advances in in situ characterization have enabled significant acceleration in improvements to these materials are described. Methods for enhancing the properties of functional materials or creating entirely new functionality at interfaces are covered, including strain engineering and layering control at the atomic-layer level. Emerging applications of these functional oxides such as achieving electrical control of ferromagnetism and the future of these complex functional oxides is discussed.

/pdf/advances-in-the-growth-and-characterization-of-magnetic-1r6yol3qt6.pdf

Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films

Concomitant with the development of metal-based spintronics in the late 1980's and 1990's, important advances were made on the growth of high-quality oxide thin films and heterostructures While this was at first motivated by the discovery of high-temperature superconductivity in perovskite Cu oxides, this technological breakthrough was soon applied to other transition metal oxides, and notably mixed-valence manganites The discovery of colossal magnetoresistance in manganite films triggered an intense research activity on these materials, but the first notable impact of magnetic oxides in the field of spintronics was the use of such manganites as electrodes in magnetic tunnel junctions, yielding tunnel magnetoresistance ratios one order of magnitude larger than what had been obtained with transition metal electrodes Since then, the research on oxide spintronics has been intense with the latest developments focused on diluted magnetic oxides and more recently on multiferroics In this paper, we will review the most important results on oxide spintronics, emphasizing materials physics as well as spin-dependent transport phenomena, and finally give some perspectives on how the flurry of new magnetic oxides could be useful for next-generation spintronics devices

Oxide spintronics

We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements. Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grown in order to obtain a high quality system, capable of functioning at room temperature. Spin polarized transport measurements reveal significant TMR values of -18% at 2 K and -3% at 290 K. In addition, the TMR ratio follows a unique bias voltage dependence that has been theoretically predicted to be the signature of spin filtering in MTJs containing magnetic barriers. CoFe2O4 tunnel barriers therefore provide a model system to investigate spin filtering in a wide range of temperatures.

Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers

https://hal-cea.archives-ouvertes.fr/cea-01365822/document

Determination of the cation site distribution of the spinel in multiferroic CoFe2O4 / BaTiO3 layers by X-ray photoelectron spectroscopy

We assess the potential of the ferrimagnetic spinel ferrites CoFe${}_{2}$O${}_{4}$ and NiFe${}_{2}$O${}_{4}$ to act as spin filtering barriers in magnetic tunnel junctions. Our study is based on the electronic structure calculated by means of first-principles density functional theory within different approximations for the exchange correlation energy. We show that, in agreement with previous calculations, the density of states suggests a lower tunneling barrier for minority spin electrons, and thus a negative spin-filter effect. However, a more detailed analysis based on the complex band structure reveals that both signs for the spin-filtering efficiency are possible, depending on the band alignment between the electrode and the barrier materials and depending on the specific wave-function symmetry of the relevant bands within the electrode.

/pdf/spin-filtering-efficiency-of-ferrimagnetic-spinels-cofe-2-o-5e50qoqnrz.pdf

Spin-filtering efficiency of ferrimagnetic spinels CoFe 2 O 4 and NiFe 2 O 4

Influence of a metallic or oxide top layer in epitaxial magnetic bilayers containingCoFe2O4(111)tunnel barriers

Experimental evidence of the spin dependence of electron reflections in magneticCoFe2O4∕Au∕Fe3O4trilayers

The giant magnetoresistance (GMR) of multilayers in the current in plane (CIP) geometry can be understood by considering the spin-dependent scattering effects within the magnetic layers and at the non-magnetic/magnetic interfaces In this paper we experimentally put on view the magnetoresistance effect created only by the spin-dependent reflection of electrons at the interfaces Two epitaxial systems were studied, consisting of two ferrimagnetic insulators layers at low temperature (CoFe2O4 and Fe3O4) separated by a non-magnetic metallic layer (M = Au or Pt) The transport properties indicate that conduction of the CoFe2O4/M/Fe3O4 trilayers take place within the thin metallic layer An optimal magnetoresistance up to 5% at 10 K associated to the switching from parallel to anti-parallel configuration of the magnetization of the two ferrite layers has been obtained It is associated to the spin-dependent interfacial scattering contribution of the CIP-GMR The augmentation of the GMR when decreasing the metallic layer thickness or increasing the oxide layers width confirms this GMR is essentially an interfacial phenomenon The Pt-based system shows an additional Anisotropic Magnetoresistance (AMR), which is not evidenced in the Au-based trilayer We suggest that this AMR comes from the polarization of the Pt layer by the ferrimagnetic oxides

Experimental evidence of the spin-dependence of electrons reflections in magnetic multilayers

We report on the antiphase boundaries network of ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}(111)$ thin films. $5\text{\ensuremath{-}}\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}50\text{\ensuremath{-}}\mathrm{nm}$-thick samples were epitaxially grown by molecular beam epitaxy onto $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{Al}}_{2}{\mathrm{O}}_{3}(0001)$ substrates. The magnetic properties of the samples have been interpreted within the framework of a one-dimensional model of antiphase boundary (APB), which predicts that the magnetization is given by ${M}_{\ensuremath{\infty}}(1\ensuremath{-}b∕\sqrt{H})$ in the approach to saturation regime. Transmission electron micrographs of several samples were used to extract the statistical parameters of the APB network, particular emphasis being put on the relevance and statistical significance of the studied parameters. The mean antiphase domain size $\overline{D}$, as the antiphase boundaries characteristic length ${l}_{0}$ extracted from a fractal analysis, vary as the square root of film thickness/deposition time and are within the $10\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ range. The APB density was found to vary as $1∕{l}_{0}$ as expected from the fractal dimensions of the network. The dependency of the $b$ parameter of the magnetic model on the APB density is finally analyzed in the light of micromagnetic simulations of chains including finite size antiphase domains and two APBs.

Characterization of antiphase boundary network in Fe 3 O 4 ( 111 ) epitaxial thin films: Effect on anomalous magnetic behavior

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Influence of a metallic or oxide top layer in epitaxial magnetic bilayers containingCoFe2O4(111)tunnel barriers

Experimental evidence of the spin dependence of electron reflections in magneticCoFe2O4∕Au∕Fe3O4trilayers

Experimental evidence of the spin-dependence of electrons reflections in magnetic multilayers

Characterization of antiphase boundary network in Fe 3 O 4 ( 111 ) epitaxial thin films: Effect on anomalous magnetic behavior