Fabrication of more and more complex multichip assemblies with quantum devices and quantum bits is driving efforts toward superconducting interconnect developments. In this context, we investigate the damascene integration of Nb-based vias with a focus on the chemical mechanical polishing of Nb. Various slurries typically used for common metal or oxide polishing are evaluated using the following criteria: the removal rate of Nb, the selectivity on SiO2 dielectrics, the polishing within wafer non uniformity and the resulting Nb roughnesses. Damascene integration of the Nb-based vias is then presented using the selected slurries.

Chemical Mechanical Polishing of Superconducting Metals for Quantum Device Interconnections

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Chemical Mechanical Polishing of Superconducting Metals for Quantum Device Interconnections