Carsten Hartmann
Institut für Kristallzüchtung
46 Papers
127 Citations
Carsten Hartmann is an academic researcher from Institut für Kristallzüchtung. The author has contributed to research in topics: Epitaxy & Chemistry. The author has an hindex of 13, co-authored 42 publications. Previous affiliations of Carsten Hartmann include Technical University of Berlin & Leibniz Association.
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Papers
Bulk AlN growth by physical vapour transport
TL;DR: In this paper, three growth strategies for the first generation of AlN seeds, grain selection, heteroepitaxially seeding on SiC, and spontaneous nucleation, are evaluated regarding their impact on the structural properties and the sizes of the grown AlN crystals.
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Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals
Carsten Hartmann,Juergen Wollweber,Andrea Dittmar,Klaus Irmscher,Albert Kwasniewski,Frank Langhans,Tom Neugut,Matthias Bickermann +7 more
TL;DR: In this paper, the same C concentrations but different amounts of O and Si are measured by secondary ion mass spectrometry (SIMS) in the two growth zones nearly the same concentration but different amount of Si is measured.
78
Thermal conductivity of single-crystalline AlN
Robert Rounds,Biplab Sarkar,Andrew Klump,Carsten Hartmann,Toru Nagashima,Ronny Kirste,Alexander Franke,Matthias Bickermann,Yoshinao Kumagai,Zlatko Sitar,Ramon Collazo +10 more
TL;DR: The thermal conductivity of AlN single crystals grown by physical vapor transport (PVT) and hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω method as discussed by the authors.
64
Ultraviolet luminescence in AlN
Tobias Schulz,Martin Albrecht,Klaus Irmscher,Carsten Hartmann,Jürgen Wollweber,Roberto Fornari +5 more
TL;DR: In this article, the defect related luminescence in the near UV region between 3 and 4eV has been investigated in insulating, n-type and irradiation damaged AlN.
59
Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride
Klaus Irmscher,Carsten Hartmann,Christo Guguschev,Mike Pietsch,Jürgen Wollweber,Matthias Bickermann +5 more
TL;DR: In this paper, the authors reported the identification of tri-carbon defect in AlN bulk crystals grown by physical vapor transport, which gives rise to a single infrared absorption line at 1769 cm−1 in unintentionally carbon doped crystals.
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