A linear relationship between the level of field emission current and adjacent vacuum environment is experimentally observed over a wide range of vacuum condition. A gated-field-emission triode with its emitter tip apex above the gate electrode can survive under much worse vacuum environments and make the measurements possible. Improved transconductance is also reported with such a robust structure.

http://ieeexplore.ieee.org/iel3/3584/10696/00499223.pdf

A robust gated-field-emission triode

Extending the emitter tip apex above the gate electrode can effectively prevent the arcing induced by local outgas accumulated inside the cavity for short-lived gated-field-emission triodes. The devices with such an extended tip can perform much better in terms of reliability and transconductance.

Device geometry design for a highly robust gated-field-emission triode

Gated-Field-Emission Triode from the cone-tip formation process to its emission properties has been systematically characterized. Process simulation shows that the successful formation of the micro tip structure is mainly determined by the migration length of the e-beam evaporated layer. The measured triode characteristics matches well with the simulated program in the saturation region with proper tip radius adjustment without an artificial enhancement factor. The calculated enhancement factor matches well with other published data.

Process and device characterization of a gated-field-emission triodes for flat-panel display application

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Process and device characterization of a gated-field-emission triodes for flat-panel display application