A novel strategy for the synthesis of high-quality ternary cobalt copper sulfide nanoparticles (NPs) anchored on nitrogen doped graphene nanosheets (Co2CuS4/NG) was developed via a one-pot solvothermal method. FE-SEM and TEM images showed that the Co2CuS4 NPs with an average size of ∼21 nm were anchored to NG nanosheets. The NG nanosheets provide a large surface area to reduce self-aggregation and confine the shape of the Co2CuS4 NPs for a highly conductive network to boost the charge transport properties of energy storage devices. Impressively, the synergetic Co2CuS4/NG composite showed a high specific capacitance of ∼1005 F g−1 at 1 A g−1, excellent rate capability (770 F g−1 at 50 A g−1), and outstanding stability (96.3% capacitance retention after 5000 cycles). The electrochemical performance of the Co2CuS4/NG composite was superior to that of monometallic CoS/NG, Cu2S/NG composite, pure Co2CuS4, and NG. An asymmetric supercapacitor device fabricated using the Co2CuS4/NG composite as the positive electrode material and NG as the negative electrode material illustrates the outstanding performance for practical energy storage devices. The asymmetric supercapacitor device delivers superb energy density (53.3 W h kg−1), high power density (∼10 936 W kg−1 at 38.4 W h kg−1), and a long-cycle life (∼4000 times).

Facile fabrication of Co2CuS4 nanoparticle anchored N-doped graphene for high-performance asymmetric supercapacitors

Biorefinery and paper pulping lignins, referred hereto as technical lignins, contain condensed C–C interunit linkages. These robust C–C linkages with higher bond dissociation energies are difficult to disrupt under hydrogenolysis conditions, which are generally used for cleaving C–O bonds of native lignin in biomass or model C–O linked compounds. Thus, selective interunit C–C cleavage to release aromatic monomers for high-value applications is a challenge. We report an effective catalytic system to cleave such C–C bonds selectively under mild conditions. A representative methylene-linked C–C model dimer achieves 88% yield of mainly two aromatic monomers within 1.5 h at a reasonably low temperature (250 °C) using a commercial CoS2 catalyst. Aromatic monomers convert to nonaromatic products upon the reaction for a prolonged time. The interunit C–C bond of the dimer become unreactive to cleavage upon dehydroxylation of aromatic rings, while the methoxyl group has little effect on the cleavage. β-1 and 5-5 C–...

Selective C–C Bond Cleavage of Methylene-Linked Lignin Models and Kraft Lignin

Emergence of sulfur quantum dots: Unfolding their synthesis, properties, and applications.

A fast-charging battery that supplies maximum energy is a key element for vehicle electrification. High-capacity silicon anodes offer a viable alternative to carbonaceous materials, but they are vulnerable to fracture due to large volumetric changes during charge-discharge cycles. The low ionic and electronic transport across the silicon particles limits the charging rate of batteries. Here, as a three-in-one solution for the above issues, we show that small amounts of sulfur doping (<1 at%) render quasi-metallic silicon microparticles by substitutional doping and increase lithium ion conductivity through the flexible and robust self-supporting channels as demonstrated by microscopy observation and theoretical calculations. Such unusual doping characters are enabled by the simultaneous bottom-up assembly of dopants and silicon at the seed level in molten salts medium. This sulfur-doped silicon anode shows highly stable battery cycling at a fast-charging rate with a high energy density beyond those of a commercial standard anode.

/pdf/infinitesimal-sulfur-fusion-yields-quasi-metallic-bulk-11jc8jbfpa.pdf

Infinitesimal sulfur fusion yields quasi-metallic bulk silicon for stable and fast energy storage.

Perovskite solar cells have shown a rapid increase of performance and overcome the threshold of 20% power conversion efficiency (PCE). The main issues hampering commercialization are the lack of deposition methods for large areas, missing long-term device stability and the toxicity of the commonly used Pb-based compounds. In this work, we present a novel chemical vapor deposition (CVD) process for Pb-free air-stable methylammonium bismuth iodide (MBI) layers, which enables large-area production employing close-coupled showerhead technology. We demonstrate the influence of precursor rates on the layer morphology as well as on the optical and crystallographic properties. The impact of substrate temperature and layer thickness on the morphology of MBI crystallites is discussed. We obtain smooth layers with lateral crystallite sizes up to 500 nm. Moreover, the application of CVD-processed MBI layers in non-inverted perovskite solar cells is presented.

/pdf/chemical-vapor-deposition-of-organic-inorganic-bismuth-based-2g80szee3s.pdf

Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application.

The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S2− (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S2− species, but significantly increases the concentration of larger S clusters [polysulfides (Sn2−, n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples.

/pdf/understanding-of-sub-band-gap-absorption-of-femtosecond-1hcxui2j96.pdf

Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques

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Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques