Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li2O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc2O3, Y2O3, and Re2O3, where Re is a rare earth), ThO2, UO2, ZrO2, HfO2, and Al2O3. Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0884291400010384

Thermodynamic stability of binary oxides in contact With silicon

A method and resulting structure for growing a crystalline perovskite film (16) on a silicon dioxide layer (12) by means of an intermediate template layer (14) of a c-axis oriented layered perovskite, such as bismuth titanate. The perovskite film can be ferroelectric lead-lanthanum zirconate titanate or conductive cubic metal oxides used as electrodes for the ferroelectric.

C-axis perovskite thin films grown on silicon dioxide

Tantalum pentoxide (Ta2O5) is a promising material for the realization of biological interfaces because of its high dielectric constant, its high chemical stability, and its excellent passivating properties. Nevertheless, the deposition of highly organized silane SAMs to realize well-defined and tailored Ta2O5-based (bio)interfaces, has not been studied in great detail as of yet. In this work, we have investigated the formation of a highly ordered, dense monolayer of trichlorosilanes on Ta2O5 surfaces. Specifically, two different cleaning procedures for Ta2O5 were compared and (n-decyl)trichlorosilane (DTS) was used to study the effect of both cleaning methods on the silanization of Ta2O5. Both types of cleaning allowed the formation of complete and crystalline DTS monolayers on Ta2O5, in contrast with the incomplete, disordered silane layer assembled on uncleaned Ta2O5. The deposited self-assembled monolayers were studied by means of contact angle goniometry, Brewster angle FTIR, X-ray photoelectron spectroscopy, cyclic voltammetry, and ellipsometry. Infrared analysis exhibited a highly ordered DTS silane film on Ta2O5 and indicated a larger tilt angle of the alkyl chains on this substrate by comparison to DTS on SiO2. Furthermore, with use of ellipsometry and XPS, the silane film thickness on Ta2O5 was determined to be substantially smaller than that reported in the literature for DTS on SiO2, supporting the observations of an increased tilt angle (approximately 45 degrees ) on Ta2O5 than on SiO2 (approximately 10 degrees ). By means of cyclic voltammetry, the formation of a dense, essentially pinhole-free, silane film was observed on the cleaned samples. In conclusion, the fully characterized and optimized procedure for the silanization of Ta2O5 surfaces with trichlorosilanes will allow the formation of well-defined, reproducible, and controllable chemical interfaces on Ta2O5.

Formation of dense self-assembled monolayers of (n-decyl)trichlorosilanes on Ta/Ta2O5.

The chemical stability of different coatings for micromechanical sensors is investigated. The coatings included are standard passivation layers in the IC industry: silicon oxide, silicon nitride and silicon carbide. The corrosion rates of these materials are tested in water based media with varying pH values and temperatures. Homogenous corrosion is observed yielding etch rates up to for silicon oxide, for silicon nitride and for silicon carbide at in potassium hydroxide.

http://iopscience.iop.org/article/10.1088/0960-1317/6/1/011/pdf

Protective coatings in harsh environments

A multilayer structure comprising in order: an oriented single crystal substrate, an epitaxial buffer layer, an epitaxial metal electrode, and an epitaxial metal oxide upper layer deposited on the metal electrode. The substrate is a semiconductor selected from the group consisting of Si compounds, Ge compounds, and compounds having at least one element selected from the group consisting of Al, Ga, and In and at least one element selected from the group consisting of N, P, As, and Sb.

Multilayer structure having an epitaxial metal electrode

By direct deposition onto hot substrates, using laser ablation, crystalline YBa2Cu3O7?? (123) was obtained at 650°C on SiO2, but not on (100) Si substrates. The 123 film did not show a superconducting transition due to interfacial reactions. The failure temperature of insulating buffer layers, such as tantalum oxide and hafnium oxide, is around 500 °C. Although MgO and BaZrO3 show a high stability in contact with 123 at 900 °C, they fail as a diffusion barrier at much lower temperatures. Below 400 °C barium diffuses through MgO, which itself remains unaffected. Using BaZrO3 the same happens around 700 °C. BaF2 fails as a diffusion barrier below 400 °C. Using laser ablation, high quality 123 films were grown on ZrO2 buffer layers above 650 °C. For the first time we report superconducting transitions of 123 deposited at 650 °C onto an amorphous metal alloy, Ir45Ta55. The problems encountered using conducting buffer layers are either a low reaction temperature with 123 (HfB2 and HfN) or oxidation of the metal alloy (Ir45Ta55) around 400 °C. Intermediate noble metal layers silver and Ag/Au/Ag could not prevent oxygen diffusion towards the underlying buffer layer.

/pdf/buffer-layers-for-superconducting-ybacuo-thin-films-on-si-1k343df9dx.pdf

Buffer layers for superconducting YBaCuO thin films on Si and SiO2.

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Buffer layers for superconducting YBaCuO thin films on Si and SiO2.