C.W. Tipton
United States Army Research Laboratory
5 Papers
20 Citations
C.W. Tipton is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Thyristor & Silicon carbide. The author has an hindex of 4, co-authored 5 publications.
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Papers
Ultra high voltage MOS controlled 4H-SiC power switching devices
Sei-Hyung Ryu,Craig Capell,E. Van Brunt,Charlotte Jonas,Michael J. O'Loughlin,Jack Clayton,Khiem Lam,Vipindas Pala,Brett Hull,Yemane Lemma,Daniel J. Lichtenwalner,Qing Chun Jon Zhang,Jim Richmond,P. Butler,David Grider,Jeffrey Casady,Scott Allen,John W. Palmour,Miguel Hinojosa,C.W. Tipton,Charles Scozzie +20 more
TL;DR: In this paper, the authors compared two MOS based UHV 4H-SiC power switching devices; 15 kV 4h-siC MOSFETs and 15 kv 4hSiC n-IGBTs, and showed a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 m Ω cm 2 at 150 °C. They also showed that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15kV 4 h-Si
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Half-bridge inverter using 4H-SiC gate turn-off thyristors
C.W. Tipton,Stephen B. Bayne,T.E. Griffin,Charles Scozzie,Bruce Geil,Anant K. Agarwal,J. Richmond +6 more
TL;DR: In this article, the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode was reported.
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High temperature inductive switching of SiC GTO and diode
Stephen B. Bayne,C.W. Tipton,T.E. Griffin,Charles Scozzie,Bruce Geil +4 more
- 30 Jun 2002
TL;DR: In this paper, the authors present the results of a SiC GTO and a p-i-n diode both operating at case temperatures up to 150/spl deg/C.
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Inductive switching of 4H-SiC gate turn-off thyristors
Stephen B. Bayne,C.W. Tipton,T.E. Griffin,Charles Scozzie,Bruce Geil,A.K. Agarwal,J. Richmond +6 more
TL;DR: In this paper, the high-temperature operation of a silicon carbide gate turn-off thyristor was evaluated for use in inductively loaded switching circuits, which subject the switching device to higher internal power dissipation compared to purely resistive load elements.
High-temperature switching and evaluation of 4H-SiC gate turn-off thyristors and diodes under inductive loads
Stephen B. Bayne,C.W. Tipton,C.J. Scozzle,T.M. Griffin +3 more
- 29 Jul 2002
Abstract: Future U.S Army electric motor control applications will require power semiconductor devices that operate for thousands of hours at case temperatures of 150/spl deg/C and higher. For reliable operation of silicon (Si)-based power electronics, the case temperature must be below 120/spl deg/C. Because of this temperature limitation of Si, new wide bandgap materials, such as silicon carbide (SiC) are being investigated. We report on a SiC gate turn-off thyristor (GTO) and SiC p-i-n diode operating at case temperatures up to 150/spl deg/C. For high power and high voltage applications the GTO is the switch of choice. In this study, currents up to 2 A where switched by the GTO under pulsed and continuous switching into an inductive load. The turn-on and turn-off gains, the on-state voltage, and the turn-on and turn-off times, as a function of temperature will be discussed.
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