A stackable three-dimensional multi-chip module (MCM) is provided whereby each level of chip carrier is interconnected to another level of chip carrier through reflowing of solder balls pre-bumped onto each carrier. Each level of chip carrier, except for the top carrier, has solder balls on both top and bottom surfaces of the substrate. Optional lids can be used to seal each device, and the lid height would serve as a natural positive stand-off between each level of carriers, giving rise to hour glass shaped solder joints which maximizes the fatigue life of the joints. Heat sinks to further enhance heat dissipation of the MCM can be easily accommodated in this stacking approach. Furthermore, each substrate is capable of carrying multiple chips, so the module incorporates planar chip density growth concurrently with the three-dimensional growth giving rise to an ultradense MCM.

Three-dimensional multi-chip pad array carrier

Thin and durable level-one and level-two integrated circuit packages are provided. A thin and durable level-one package is achieved in one method involving a molding technique of evenly applying molding compound to an integrated circuit die element. The casing surrounding a die element may be reduced or eliminated in part to thin the level-one package provided any necessary steps are taken to ensure the integrity of the package. Moisture-barriers, as an example, may be provided to the upper and/or lower surfaces of the thin level-one package. Additionally, a thin level-one package may also be constructed with one or more metal layers to prevent warpage. These level-one packages may be aligned in a stacked configuration to form a thin and durable horizontal level-two package. Various thermal conductors may be thermally coupled to the level-two package to help dissipate heat.

Ultra high density integrated circuit packages

The present invention stacks integrated circuits (ICs) into modules that conserve PWB or other board surface area. In another aspect, the invention provides a lower capacitance memory expansion addressing system and method and preferably with the CSP stacked modules provided herein. In a preferred embodiment in accordance with the invention, a form standard provides a physical form that allows many of the varying package sizes found in the broad family of CSP packages to be used to advantage while employing a standard connective flex circuitry design. In a preferred embodiment, the form standard will be devised of heat transference material such as copper to improve thermal performance. In an alternative embodiment, the form standard may include a heat spreader portion with mounting feet. In a preferred embodiment of the memory addressing system, a high speed switching system selects a data line associated with each level of a stacked module to reduce the loading effect upon data signals in memory access.

Integrated circuit stacking system and method

The present invention stacks chip scale-packaged integrated circuits (CSPs) into modules that conserve PWB or other board surface area. In another aspect, the invention provides a lower capacitance memory expansion addressing system and method and preferably with the CSP stacked modules provided herein. In a preferred embodiment in accordance with the invention, a form standard is disposed between the flex circuitry and the IC package over which a portion of the flex circuitry is laid. The form standard provides a physical form that allows many of the varying package sizes found in the broad family of CSP packages to be used to advantage while employing a standard connective flex circuitry design. In a preferred embodiment, the form standard will be devised of heat transference material such as copper to improve thermal performance. In a preferred embodiment, a high speed switching system selects a data line associated with each level of a stacked module to reduce the loading effect upon data signals in memory access. This favorably changes the impedance characteristics exhibited by a DIMM board populated with stacked modules. In a preferred embodiment, FET multiplexers for example, under logic control select particular data lines associated with particular levels of stacked modules populated upon a DIMM for connection to a controlling chip set in a memory expansion system.

Memory expansion and chip scale stacking system and method

An interposer substrate for mounting an integrated circuit chip to a substrate, and method of making the same, are shown. The interposer substrate comprises power supply paths and controlled impedance signal paths that are substantially isolated from each other. Power supply is routed though rigid segments and signals are routed though a thin film flexible connector that runs from the upper surface of the interposer substrate to the lower surface. Bypass capacitance is incorporated into the interposer substrate and connected to the power supply so that it is positioned very close to the integrated circuit chip. The interposer may be fabricated by forming a multilayered thin film structure including the signal paths over a rigid substrate having vias formed therein, removing the central portion of the substrate leaving the two end segments, and folding and joining the end segments such that the vias are connected. In another embodiment of the invention, a separate power plate is provided for carrying the power lines. Portions of the power plate, with a multilayered thin film structure thereon, are cut and folded to form interposers. Methods of making single-chip interposers are also disclosed.

Controlled impedence interposer substrate

A three-dimensional interconnection technology is described that allows a reduction of the occupied area by a factor of 7 or 8 as against 2-D interconnection. The approach consists of interconnecting the bare chips not in the XY plane, but along the Z-axis. The process entails interconnecting the four lateral areas (sides) of the cube formed by stacking n chips (n=8-10) on top of one another. The chips are individually interconnected on a thin film identical to a TAB (tape automatic bonded) film by means of gold wires, prior to cubing. These chips are standard, off-the-shelf, bump-free devices. After passing electrical testing and burn-in, they are then glued on top of one another with the TAB film. After these n chip+film assemblies have been cured (polymerized), a trim operation is carried out to cut the n-chips cube out of the TAB-film carrier cube. The trim line is approximately 100 mu m from the edge of the chips. The cube containing the n chips thus provides four lateral areas (sides) in which appear the cross sections of the gold wires connecting each lead of each chip to the corresponding leads on the flexible films. These gold wire cross-sections may be interconnected in two different ways according to the number of chip layouts/outputs or the conductor pitch. >

3-D interconnection for ultra-dense multichip modules

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3-D interconnection for ultra-dense multichip modules