Two-dimensional numerical simulations incorporating the spatial distributions of the energy band and temperature were used to study AlGaAs/GaAs heterojunction bipolar transistor characteristics. It was found that the negative differential resistance and the reduction of the base-emitter voltage for a constant base current in the active region are due to thermal effects. The differential current gain and cutoff frequency decrease when the transistor is operated at high power levels. The temperature distribution of the transistor operated in the active region shows a maximum at the collector region right beneath the emitter mesa. When the transistor is operated in the saturation region, the emitter contact region may be at a slightly lower temperature than the heat sink temperature. This thermoelectric cooling effect results from the utilization of the thermodynamically compatible current and energy flow formulations in which the energy band discontinuities are part of the thermoelectric power. >

Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation

On overview on the state of the art and future trends in physics-based electron device modelling for the computer-aided design of monolithic microwave ICs is provided. After a review of the main physics-based approaches to microwave modeling, special emphasis is placed on innovative developments relevant to circuit-oriented device performance assessment, such as efficient physics-based noise and parametric sensitivity analysis. The use of state-of-the-art physics-based analytical or numerical models for circuit analysis is discussed, with particular attention to the role of intermediate behavioral models in linking multidimensional device simulators with circuit analysis tools. Finally, the model requirements for yield-driven MMIC design are discussed, with the aim of pointing out the advantages of physics-based statistical device modeling; the possible use of computationally efficient approaches based on device sensitivity analysis for yield optimization is also considered. >

/pdf/physics-based-electron-device-modelling-and-computer-aided-bdsj9rsmcm.pdf

Physics-based electron device modelling and computer-aided MMIC design

This paper presents a coupled electrothermal, electromagnetic, and physical model for microwave power field-effect transistors (FETs). The resulting model is used to investigate large gate periphery pseudomorphic high electron-mobility transistor devices. The contribution to the output power of each cell of the transistor is simulated, as well as their contribution to the heating of the device. This approach allows the investigation of the interaction between the thermal behavior, the dc bias, and the microwave circuit operating conditions. This paper reveals for the first time a more complex interaction between the thermal and microwave behavior of large-power FETs

Coupled electrothermal, electromagnetic, and physical modeling of microwave power FETs

Because of the interaction between self-heating and hot carriers effects, neither isothermal nor conventional macrothermal models are adequate for the simulation of state-of-the-art power devices; instead, a detailed electro-thermal model accounting for nonstationary transport, such as the Thermal-Fully Hydrodynamic (T-FH) model, is required. We apply a one-dimensional (1-D) implementation of such a model to the simulation of AlGaAs/GaAs and InP/InGaAs Heterojunction Bipolar Transistors (HBTs), comparing the results with those provided by simplified models, and highlighting how deeply both nonlocal transport and self-heating affect the predicted device performance. The importance of the convective terms is assessed, and a new nonthermal mechanism for the output Negative Differential Resistance (NDR) is proposed.

/pdf/a-thermal-fully-hydrodynamic-model-for-semiconductor-devices-4j99t6txps.pdf

A thermal-fully hydrodynamic model for semiconductor devices and applications to III-V HBT simulation

A review of active device models for microwave CAD simulators is presented. Large-signal, nonlinear models are of particular interest. The basic techniques employed in deriving equivalent circuit and physically based models are reviewed. Various methods for solving the semiconductor device equations to establish physically based models are indicated. Finally, it is proposed that physically based, analytic GaAs MESFET models offer an attractive compromise between simulation efficiency and quantitative accuracy. The use of such a model is demonstrated by several examples, including comparison with experimental data. These models are suitable for use in comprehensive CAD workstation environments and allow process-type device models to be interfaced directly with RF circuit simulators.

MESFET models for microwave CAD applications

A DC and small-signal self-consistent thermal physical model for power GaAs MESFETs is presented The high-resolution coupled electrothermal two-dimensional simulation is carried out on the active region only, while the large-scale outward heat flow through the boundary of the simulated region is accounted for by means of distributed thermal resistances To provide such boundary conditions, but also as an independent design tool, a novel analytical thermal resistance model for multigate power MESFETs is introduced Results from both models are discussed and compared with measurements >

High-resolution self-consistent thermal modelling of multi-gate power GaAs MESFETs

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High-resolution self-consistent thermal modelling of multi-gate power GaAs MESFETs