Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first discuss III–V lasers that are highly tolerant to dislocations, including quantum dot/dash diode lasers, interband cascade, and quantum cascade lasers grown on Si from near infrared to long-wave infrared. We then move to the selective heteroepitaxy of low dislocation density III–Vs for the bufferless lasers. Finally, we review the III–V nanowire photonic crystal lasers grown on Si, which offers a different approach to overcome material mismatch and grow dislocation free III–V structures on silicon. We start with briefly introducing the recent progress of each technology, followed with a discussion of its key advantages, research challenge and opportunities.

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

This work investigates the polarization state of light diffracted from uncoated and gold‐coated InP nanowire photonic crystal arrays grown by selective area epitaxy. Experimental data and finite‐difference time‐domain simulations show that both the intensity and the ellipticity of the polarization state of the diffracted light beam can be controlled by the nanowire dimensions and gold coating, while the diffracted angle remains unchanged with respect to variations of these parameters. A nominally 10 nm‐thick gold film deposited around the nanowires enhances the diffraction intensity by plasmonic effects. These results demonstrate that the controlled conversion of incident linearly polarized light to circularly polarized or rotated linearly polarized diffracted light can find applications in photonic integrated circuits. The high sensitivity of the polarization state with respect to alterations of the nanowire dimension opens new prospects in the areas of semiconductor metrology and microchip inspection as well as for submicron particle detection.

https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/adom.202202342

Polarization Conversion of Light Diffracted from InP Nanowire Photonic Crystal Arrays

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Polarization Conversion of Light Diffracted from InP Nanowire Photonic Crystal Arrays