Over the last years considerable progress has been made in semiconductor optoelectronics because of the needs of optical telecommunications and the emergence of new fields. Today, semiconductor optical devices are used in fiberoptic systems and for satellite communication, for optical data communication, storage, reading and writing, for optical sensors and measurements, and as solidstate laser pumps. These devices are expected to be more extensively applied in emerging areas such as optical interconnects, optical signal processing and computing or optical memory. This development has been made possible by the greater maturity of material growth and device fabrication techniques, and by an increased knowledge of semiconductor materials and device structures. Ongoing research in this field is reported in the literature and enhanced fabrication tends to make high-yield and low-cost semiconductor devices available.

Optoelectronic semiconductor devices

Chlorine-based dry etching of III/V compound semiconductors for optoelectronic applications has been reviewed. The advantages of the ultrahigh-vacuum (UHV)-based electron cyclotron resonance (ECR)-plasma reactive ion beam etching (RIBE) over conventional RF-plasma reactive ion etching (RIE) were emphasized as the capability to use carbon-free, chlorine (Cl2) gas plasmas, controllability of ion energies and compatibility with other UHV-based chambers such as a molecular beam epitaxy (MBE) chamber. The RIBE technique was shown to exhibit excellent laser diode performances, such as extremely low threshold-current, high polarization-controllability and a lifetime of more than 3000 h for structures with more than 1-µm-wide etched-mesa width. The degree of etching-induced damage was evaluated in terms of the nonradiative surface recombination velocity Sr and the possibilities of practical applications of the dry-etched devices were discussed using the Sr values.

Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application

HCl radical beam etching has been used to produce strain‐induced lateral confinement in a GaAs quantum well. This confinement was generated in the GaAs quantum well by radical beam etching a grating pattern into a pseudomorphic, strained layer of In0.35Ga0.65As which overlies the GaAs quantum well. The photoluminescence spectrum showed two peaks, corresponding to the GaAs quantum well both beneath the strained layer and in regions where the strained overlayer had been etched away. The peak due to strain‐induced confinement displayed a redshift that increases with etch time; the maximum shift observed was 20 meV. The after‐etch photoluminescence intensity and the systematic peak shift with etch time are indicators of the degree of control and low‐damage nature of the etch process used.

Systematic observation of strain‐induced lateral quantum confinement in GaAs quantum well wires prepared by chemical dry etching

Optical properties of wire and dot structures for photonic applications

The size dependence of various aspects of quantum-confinement effects in ${\mathrm{In}}_{0.53}$${\mathrm{Ga}}_{0.47}$As/InP quantum wires was quantitatively examined through photoluminescence experiments with and without magnetic field, along with theoretical calculation. The wires were fabricated by combining electron-beam lithography and reverse-mesa wet etching, thus enabling us to easily control the lateral size independently of the vertical size. Photoluminescence experiments showed distinct peak shifts with changes in the lateral size and showed a shoulder structure that is attributed to laterally quantized second subbands. The energy shift of both levels is explained by a detailed theoretical calculation that incorporates conduction-band nonparabolicity, valence-band coupling, and excitonic correction. The lateral quantum confinement is also demonstrated by the magnetic-field effect on the luminescence spectrum, in which we can distinguish the lateral quantum effects from other factors. As magnetic-field strength increases, a transition from quantum-confined subbands to Landau subbands was clearly observed for first and second subbands. At high excitation levels, the quenching of higher Landau levels was observed. In-plane and perpendicular-to-plane anisotropy of polarization in luminescence was also investigated and the size dependence of this anisotropy in both directions is largely explained by the calculated lateral confinement effect of the optical-transition matrix elements. The phenomenon observed for narrower wires, however, cannot be explained by our theory and is thought to be due to wave-function localization.

Size dependence of lateral quantum-confinement effects of the optical response in In0.53Ga0.47As/InP quantum wires.

Buried GaAs/AlGaAs quantum wires were prepared by Al0.2Ga0.8As overgrowth of deep etched wires defined by high‐resolution electron beam lithography and dry etching. The overgrown wires show a dramatic decrease of the optically inactive sidewall layer compared to open wires. For wires with a lateral dimension Lx=50 nm we observe a spectral shift to higher energies of the excitonic emission, in good agreement with calculations of the two‐dimensional confinement effects.

Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires

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Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires