The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

Hydrogen interactions with imperfections in crystalline metals and semiconductors are reviewed. Emphasis is given to mechanistic experiments and theoretical advances contributing to predictive understanding. Important directions for future research are discussed.

Hydrogen interactions with defects in crystalline solids

The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

/pdf/extended-defects-in-semiconductors-electronic-properties-2b27o60t46.pdf

Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures

Atomic profiles show that hydrogen is incorporated in GaAs:C that has been grown by metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be about 5% of the carbon concentration for our growth conditions. An infrared absorption study shows that this hydrogen is involved in stable C‐H complexes. At the lower C concentrations (<1019 cm−3) the CAs‐H complex is the dominant species involving C and H. At higher C concentrations new complexes involving C and H appear.

Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy

Hydrogen incorporation depths of ≥1 μm are measured for 2H plasma exposure of GaN and AlN at 250–400 °C for 30 min. The concentration of 2H incorporated is in the range 5–10×1017 cm−3 for GaN and 5–30×1018 cm−3 for AlN under these conditions. No redistribution of the hydrogen is observed for annealing temperatures up to 800 °C, but at 900 °C there is substantial loss of hydrogen from the samples. Similar results are obtained for 2H implantation into GaN, AlN, and InN, with no significant redistribution observed up to 500–600 °C in either AlN or InN, and motion only at 900 °C in GaN. The thermal stability of hydrogen in III‐V nitrides explains previous results for Mg‐doped GaN grown using NH3, where post‐growth annealing at high temperatures was required to achieve appreciable doping efficiencies.

Hydrogenation of GaN, AlN, and InN

Plasma hydrogenation for 3 h at 250 °C of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition, followed by a 5‐min, 400 °C anneal to restore the passivated shallow donor electrical activity, increases the reverse breakdown voltage of Schottky diode structures from 2.5 to 6.5 V. This improvement appears to be a result of the passivation by atomic hydrogen of defects such as threading dislocations caused by the large (4%) lattice mismatch between GaAs and Si. A reduced Schottky barrier height is exhibited by hydrogenated samples, consistent with As depletion of the surface occurring during the long duration plasma processing.

Hydrogenation of GaAs on Si: Effects on diode reverse leakage current

We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs‐on‐Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n‐type (2×1017 cm−3) GaAs‐on‐Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H‐implanted material, in comparison to 150 °C for the plasma‐hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping i...

Electrical effects of atomic hydrogen incorporation in GaAs-on-Si

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Hydrogenation of GaAs on Si: Effects on diode reverse leakage current

Electrical effects of atomic hydrogen incorporation in GaAs-on-Si