Iron doped GaN layers were grown by metalorganic chemical vapor deposition (MOCVD) using ferrocene as the Fe precursor. Specular films with concentrations up to 1.7×1019 cm−3, as determined by secondary ion mass spectrometry, were grown. The Fe concentration in the film showed a linear dependence on the precursor partial pressure, and was insensitive to growth temperature, pressure, and ammonia partial pressure. Memory effects were observed, similar to Mg doping of GaN by MOCVD. The deep acceptor nature of Fe was used for growth of semi-insulating GaN films on sapphire substrates. A 2.6-μm-thick GaN film with a resistivity of 7×109 Ω/sq was attained when the first 0.3 μm of the film was Fe doped. X-ray diffraction rocking curves indicated high crystalline quality, very similar to an undoped film, showing that Fe doping did not affect the structural properties of the film. Fe doping allows for growth of semi-insulating GaN on sapphire without the high threading dislocation densities and/or high carbon leve...

Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

Resistivity control in unintentionally doped GaN films grown by MOCVD

Growth and characteristics of Fe-doped GaN

Measured and calculated (without any adjustable material parameter) electron Hall mobility and carrier concentration in the range of 265–273 K are reported for a high-mobility free-standing bulk GaN grown by hydride vapor phase epitaxy The peak electron mobility of 7386 cm 2 /V s at 48 K and a value of 1425 cm 2 /V s at 273 K were measured An iterative solution of the Boltzmann equation was applied to calculate the mobility using the materials parameters either measured on the sample under study or recent values that are just becoming available with only the acceptor concentration being variable Using only one donor and one conducting layer system, the donor and acceptor concentrations of 176×10 16 and 24×10 15 cm −3 , respectively, satisfy simultaneously the charge neutrality and electron mobility at all temperatures within the framework of the iterative method and measurements The donor activation energy was determined to be 252 meV and is consistent with the value of about 30 meV for the hydrogenic ground state in a dilute semiconductor The high electron mobility, low background impurity concentration, low compensation ratio, and negligible dislocation scattering demonstrate the high quality of the material studied

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p?i?n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63Ni source with activity of 0.5?mCi, the open-circuit voltage of the fabricated microbattery with 2???2?mm2?area reaches as much as 1.64?V, which is the record value reported for betavoltaic batteries with 63Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery.

https://iopscience.iop.org/article/10.1088/0960-1317/22/7/074011/pdf

A high open-circuit voltage gallium nitride betavoltaic microbattery

Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each other with temperature. We demonstrate that this anomaly is mainly due to a conductive layer near the GaN/sapphire interface for thin samples with low carrier density. Through trapping electrons, threading edge dislocations (TEDs) debilitate the epilayer contribution in a two-layer mixed conduction model involving the epilayer and the near-interface layer. The trapping may, in part, explain low mobility and anomalous transport in pure GaN layers. Scattering by TEDs is important only at low temperatures.

Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers

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Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers