C. Ryan
Tyndall National Institute
5 Papers
30 Citations
C. Ryan is an academic researcher from Tyndall National Institute. The author has contributed to research in topics: Capacitive sensing & Capacitance. The author has an hindex of 3, co-authored 5 publications. Previous affiliations of C. Ryan include University College Cork.
Chat about Author
Papers
A simple electrical test method to isolate viscoelasticity and creep in capacitive microelectromechanical switches
TL;DR: In this paper, a bipolar hold-down voltage was used to study mechanical degradation in radio-frequency microelectromechanical capacitive shunt switches, and the characteristics of material stress relaxation and recovery were monitored by recording the change of the pull-in voltage of a device.
13
Reliability assessment of MEMS switches for space applications: laboratory and launch testing
Conor O'Mahony,Oskar Z. Olszewski,Ronan Hill,Ruth Houlihan,C. Ryan,Kenneth Rodgers,Carmel Kelleher,Russell Duane,Martin Hill +8 more
TL;DR: In this article, a combination of ground-based and flight tests was employed to examine the reliability of capacitive radio-frequency microelectromechanical switches for use in space applications.
11
Experimental isolation of degradation mechanisms in capacitive microelectromechanical switches
TL;DR: In this paper, the authors used DC and bipolar voltage stresses to isolate mechanical degradation of the movable electrode from charging mechanism in microelectromechanical capacitive switches and found that the narrowing effect occurs regardless if dc or bipolar voltages are used, indicating the mechanical degradation as the mechanism responsible.
7
•Proceedings Article
MEMS capacitive switch with stable actuation voltage over a broad temperature range
Oskar Z. Olszewski,C. Ryan,Ruth Houlihan,Conor O'Mahony,Russell Duane +4 more
- 25 Apr 2012
TL;DR: In this paper, the pull-in and upstate capacitance of two types of switch have been measured for temperatures from −25 to 75 °C. In one device, the plate is suspended by meander springs, while in the second by straight springs.
1
Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches
TL;DR: In this paper, a simple model was created based on established transient stress-induced leakage current theory which accurately fits the measured data and reveals that charge exchange at the bottom metal-dielectric interface is responsible for charging currents and pull-in voltage changes in these MEMS devices.