In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose 
dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) 
emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being 
operated at high frequencies, their low threshold current and their low beam divergence. Such devices 
emitting in this wavelength range have been demonstrated using different materials such as strained 
GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8, 
9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase 
epitaxy (MOVPE). 
In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be 
efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these 
requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could 
therefore benefit to future new sources for photonics on silicon applications. 
In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with 
GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

We have processed 1.3 µm range InAs quantum dot oxide confined vertical cavity surface emitting lasers with top distributed Bragg reflectors contacts, all on GaAs substrate. Our devices exhibit acceptable parameters for 10 Gigabit Ethernet standards. 1275 nm lasing operation is achieved with low operation voltage and low threshold current. We study the threshold current variation with temperature in continuous wave and pulsed operation. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Gallium arsenide second‐window quantum dot VCSEL

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Gallium arsenide second‐window quantum dot VCSEL