Plastic-substrate-based electronic devices are attractive because of their inherit merits of low cost, light weight, environmentally friendly low temperature processing, and the application in fl exible displays and integrated circuits (ICs). Fast progress of logic ICs using thin-fi lm transistors (TFT) on plastic has been demonstrated. However, one fundamental challenge for plastic electronics is the lack of good performance non-volatile memory (NVM) devices. [ 1–5 ] This is due to the degraded dielectric quality of charge-based fl ash (CTF) memory from the limited low temperature process. [ 2 ] Alternatively, the resistive random access memory (RRAM) [ 6–21 ] shows promising NVM performance on plastic even when processed at low temperature, but the large set and reset currents are the basic limitation for high-density and low-power operation. In addition, the large switching energies degrade the endurance due to excessive stress. In this paper, record high-performance NVM has been demonstrated on low cost polyimide substrate. A very low set current of 1.6 μ A at 3 V (4.8 μ W) and reset current of −0.5 nA at −2 V (1 nW) were needed to reach the bistable resistance state, which led to a large memory window with a highto low-resistance state ratio (HRS/LRS) of 9 × 10 2 . Additionally, good retention was obtained with a small HRS/LRS decay from the initial 9 × 10 2 to 7 × 10 2 at 85 ° C for 10 4 s. Furthermore, excellent endurance of 10 5 cycles was measured at a very fast 50 ns switching time. This is the lowest reported switching power NVM on plastic with excellent 10 5 cycling endurance and good retention. The excellent NVM performance on fl exible plastic is due to the using novel ultra-low power hopping conduction mechanism [ 22 ] rather than the conductive fi lament in conventional RRAM. [ 17 , 18 ] This new RRAM device sets a new standard for NVM performance on low-cost fl exible substrates.

https://ir.nctu.edu.tw:443/bitstream/11536/9298/1/000287668500016.pdf

Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance

High performance novel RRAM of 0.3 µW set power (0.1 µA at 3 V), 0.6 nW reset power (−0.3 nA at −1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 104 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.

High performance ultra-low energy RRAM with good retention and endurance

We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum2 and a leakage current of 3 times 10-8 (25degC) or 6 times 10-7 (125degC) A/cm2 at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

https://ir.nctu.edu.tw:443/bitstream/11536/8516/1/000258096000008.pdf

High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$

The leakage current characteristics of SrTiO3 MIM capacitors, fabricated using atomic layer deposition, are investigated. The characteristics are highly sensitive to the polarity and magnitude of applied voltage bias, punctuated by sharp increases at high field. The characteristics are also asymmetric with bias and the negative to positive current crossover point always occurs at a negative voltage bias. In this work, a model comprising thermionic field emission and tunneling phenomena is proposed to explain the dependence of leakage current upon the device parameters quantitatively.

/pdf/a-comprehensive-study-on-the-leakage-current-mechanisms-of-29tgtqqehj.pdf

A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor

Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resistive switching characteristics in as-grown and high-temperature annealed states. Here, we studied the electrical characteristics of Ta2O5−x oxide-based bipolar resistive frames for various TaNx bottoms. Control of the nitrogen content of the TaNx electrode is a key factor that governs variations in its oxygen affinity and structural phase. We analyzed the composition and chemical bonding states of as-grown and annealed Ta2O5−x and TaNx layers and characterized the TaNx electrode-dependent switching behavior in terms of the electrode’s oxygen affinity. Our experimental findings can aid the development of advanced resistive switching devices with thermal stability up to 400 °C.

Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching.

Using low-cost and high work-function Ni, a low leakage current of 5times10-6 A/cm2 at 125 degC is obtained in a high 25-fF/mum2-density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 degC. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall kappa value beyond previous laminate structure

https://ir.nctu.edu.tw:443/bitstream/11536/11074/1/000245184700016.pdf

High-Temperature Leakage Improvement in Metal–Insulator–Metal Capacitors by Work–Function Tuning

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High-Temperature Leakage Improvement in Metal–Insulator–Metal Capacitors by Work–Function Tuning