C. Monier
Sandia National Laboratories
8 Papers
94 Citations
C. Monier is an academic researcher from Sandia National Laboratories. The author has contributed to research in topics: Heterojunction bipolar transistor & Bipolar junction transistor. The author has an hindex of 6, co-authored 8 publications.
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Papers
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
B. Luo,Jerry W. Johnson,Jihyun Kim,R. M. Mehandru,Fan Ren,Brent P. Gila,A. H. Onstine,C. R. Abernathy,Steve Pearton,Albert G. Baca,R. D. Briggs,Randy J. Shul,C. Monier,Jung Han +13 more
TL;DR: In this paper, low-temperature layers of MgO or Sc2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps.
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Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Jerry W. Johnson,Albert G. Baca,R. D. Briggs,Randy J. Shul,Joel R. Wendt,C. Monier,Fan Ren,Stephen J. Pearton,Amir M. Dabiran,A. M. Wowchack,C. J. Polley,Peter Chow +11 more
TL;DR: In this paper, the performance of AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy was investigated for gate lengths in the range 0.1-1.2 μm.
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Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire
Jerry W. Johnson,Jung Han,Albert G. Baca,R. D. Briggs,Randy J. Shul,Joel R. Wendt,C. Monier,Fan Ren,B. Luo,S.N.G Chu,D. Tsvetkov,Vladimir Dmitriev,Stephen J. Pearton +12 more
TL;DR: In this article, the defect density in the structures grown on the AlN/SiC template is significantly lower than those grown on sapphire, as measured by transmission electron microscopy.
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Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor
P.C. Chang,N.Y. Li,Albert G. Baca,H.Q. Hou,C. Monier,J.R. Laroche,Fan Ren,Stephen J. Pearton +7 more
TL;DR: In this article, the dc and rf characteristics of a p-n-p GaAs/InGaAsN/GaAs double heterojunction bipolar transistor have been demonstrated.
Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors
TL;DR: In this paper, the effects of different thermal treatments on material quality and their impact on dc and rf characteristics on small-area devices are examined in order to improve the performance of the initial as-grown InGaAsN-based HBTs.
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