C. Karbaum
Otto-von-Guericke University Magdeburg
9 Papers
115 Citations
C. Karbaum is an academic researcher from Otto-von-Guericke University Magdeburg. The author has contributed to research in topics: Cathodoluminescence & Photoluminescence. The author has an hindex of 5, co-authored 9 publications.
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Papers
Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution.
A. Urban,Marcus Müller,C. Karbaum,Gordon Schmidt,Peter Veit,J. Malindretos,Frank Bertram,Jürgen Christen,A. Rizzi +8 more
TL;DR: Selective area growth has been applied to fabricate a homogeneous array of GaN nanocolumns (NC) with high crystal quality to allow the characterization of individual BSFs, which is of high interest for studying their optical properties.
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Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates
Natalia Izyumskaya,Fan Zhang,Serdal Okur,T. Selden,V. Avrutin,Ümit Özgür,Sebastian Metzner,C. Karbaum,Frank Bertram,Juergen Christen,Hadis Morkoç +10 more
TL;DR: In this article, the formation of defects in semipolar (11¯01)-oriented GaN layers grown by metal-organic chemical vapor deposition on patterned Si (001) substrates and their effects on optical properties were investigated by steady-state and time-resolved photoluminescence (PL) and spectrally and spatially resolved cathodoluminecence (CL).
Spectrally and time‐resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11$\overline {2} $2) and (10$\overline {1} $1) pyramid facets
Sebastian Metzner,Frank Bertram,C. Karbaum,Thomas Hempel,Thomas Wunderer,Stephan Schwaiger,Frank Lipski,Ferdinand Scholz,Clemens Wächter,Michael Jetter,Peter Michler,Jürgen Christen +11 more
TL;DR: In this article, the spectral and time-resolved cathodoluminescence (CL) properties of InGaN/GaN single quantum wells (SQWs) grown on inverted pyramids have been studied by spatially, spectrally, and timeresolved CL microscopy.
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Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence
Serdal Okur,Sebastian Metzner,Natalia Izyumskaya,Fan Zhang,Vitaliy Avrutin,C. Karbaum,Frank Bertram,Juergen Christen,Hadis Morkoç,Ümit Özgür +9 more
TL;DR: The spatial distribution of extended defects in semipolar (11¯01)-oriented GaN layers grown on patterned Si substrates with striped grooves of varying width was investigated by optical means only using near-field scanning optical microscopy (NSOM) and cathodoluminescence (CL) as discussed by the authors.
Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates
Natalia Izyumskaya,S. Liu,V. Avrutin,Serdal Okur,Fan Zhang,Ümit Özgür,Sebastian Metzner,C. Karbaum,Frank Bertram,Jürgen Christen,David J. Smith,Hadis Morkoç +11 more
TL;DR: In this paper, the effects of reactor pressure and substrate temperature on optical properties of (1-101) GaN were studied by steadystate and time-resolved photoluminescence.
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