The AC electromigration of multilayered interconnect systems consisting of TiW-AlSiCu and CVD W-AlSiCu is studied under stress of repetitive dual-pulse current waveforms at 2 MHz. By using a general AC waveform in which the peak current density of the first pulse j/sub 1/ is fixed and the second is varied from +j/sub 1/ to -j/sub 1/, a continuous electromigration spectrum from DC through pulsed DC to pure AC conditions is obtained. Although an average current model fits the data well, there is a singularity in the median time-to-failure at pure-AC conditions. To avoid this singularity, a modification of the average current model, called the average current recovery model, is developed. It heuristically accounts for the degree of damage recovery during opposite-polarity pulses through a single recovery parameter. >

AC electromigration characterization and modeling of multilayered interconnects

Electromigration in thin-films for microelectronics

Electromigration under time-varying current stress

The design trend of digital very-large-scale integrated circuits (VLSI) toward higher power dissipation per chip, higher switching speeds, and smaller cross-section interconnect metallization lines has increased concern about the reliability of these devices with respect to electromigration as a failure mechanism. A simulation model for the major physical processes that influence the development and progression of electromigration damage due to pulsed electric currents is described. A comparison of model behavior to that observed experimentally for steady current (DC) stressing is made, and it is concluded that the model may provide a reasonable prediction of expected behavior under pulsed current stressing. However, experimental verification of the model is required before it can be used with assurance for design guidance. >

A simulation model for electromigration in fine-line metallization of integrated circuits due to repetitive pulsed currents

A highly sensitive current sensor based on an optical microfiber loop resonator (MLR) incorporating low index polymer is proposed and experimentally demonstrated. The microfiber with a waist diameter of 2 μm is wrapped around the nichrome wire with low index polymer overlay to realize the MLR as the highly sensitive current sensor. Low index polymer overlay can successfully reduce round-trip fractional loss resulting in the improvement of the Q-factor ( Q ) and the finesse ( F ) of the MLR around the nichrome wire. The use of the microfiber with a waist diameter of 2 μm and low index polymer with high thermal property can effectively improve the current sensitivity of the proposed MLR to be 437.9 pm/A2.

Highly Sensitive Current Sensor Based on an Optical Microfiber Loop Resonator Incorporating Low Index Polymer Overlay

Electromigration failure in aluminum conductors is strongly temperature activated, and reliable levels of current density do significantly raise the conductor temperature. However, the temperature increase and its ultimate effect on the conductor lifetime is related to device and substrate structure and to the pulsewidth and duty cycle of pulsed currents. This work describes simple but accurate models for thermal buildup in typical IC structures due to both constant and pulsed currents. The results are then included in predictive models for pulsed current electromigration lifetime. These models include temperature cycling and its effect on damage relaxation between pulses, and they are built up in a modular fashion from the basic constant current model. Experimental data is shown to support the theory.

Effects of Substrate Thermal Characteristics on the Electromigration Behavior of Al Thin Film Conductors

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Effects of Substrate Thermal Characteristics on the Electromigration Behavior of Al Thin Film Conductors