C. J. Polley
20 Papers
249 Citations
C. J. Polley is an academic researcher. The author has contributed to research in topics: Bipolar junction transistor & Molecular beam epitaxy. The author has an hindex of 10, co-authored 20 publications.
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Papers
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
B. Luo,Jerry W. Johnson,Fan Ren,K. K. Allums,C. R. Abernathy,Stephen J. Pearton,R. Dwivedi,T. N. Fogarty,Richard Wilkins,Amir M. Dabiran,A. M. Wowchack,C. J. Polley,Peter Chow,Albert G. Baca +13 more
TL;DR: In this paper, a range of gate lengths (0.8-1.2μm) and widths (100-200 μm) were exposed to 40 MeV protons at fluences of 5×109 or 5×1010 cm−2.
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Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors
B. Luo,Jerry W. Johnson,Fan Ren,K. K. Allums,C. R. Abernathy,S. J. Pearton,Amir M. Dabiran,A. M. Wowchack,C. J. Polley,Peter Chow,D. Schoenfeld,Albert G. Baca +11 more
TL;DR: In this article, high electron mobility transistors (HEMTs) with different gate length and widths were irradiated with 60Co γ-rays to doses up to 600 Mrad.
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High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors
B. Luo,Jerry W. Johnson,Fan Ren,K. K. Allums,C. R. Abernathy,Stephen J. Pearton,R. Dwivedi,T. N. Fogarty,Richard Wilkins,Amir M. Dabiran,A. M. Wowchack,C. J. Polley,Peter Chow,Albert G. Baca +13 more
TL;DR: In this article, the authors showed that postirradiation annealing at 300°C was able to restore ∼ 70% of the initial gm and IDS values in HEMTs receiving proton doses of 5 × 1010 cm-2.
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Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Jerry W. Johnson,Albert G. Baca,R. D. Briggs,Randy J. Shul,Joel R. Wendt,C. Monier,Fan Ren,Stephen J. Pearton,Amir M. Dabiran,A. M. Wowchack,C. J. Polley,Peter Chow +11 more
TL;DR: In this paper, the performance of AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy was investigated for gate lengths in the range 0.1-1.2 μm.
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GaN PN junction issues and developments
R. Hickman,J. M. Van Hove,Peter Chow,J. J. Klaassen,Andrew M. Wowchak,C. J. Polley,D.J King,Fan Ren,C. R. Abernathy,Stephen J. Pearton,K. B. Jung,H. Cho +11 more
TL;DR: In this article, the electron diffusion length in p-GaN doped at 1·1018 cm−3 was estimated to be 790 A, and the minority carrier lifetime in the p-gaN was found to be 24 ps to 0.24 ns.
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