Here, we report detailed strain mapping analysis at heterointerfaces of a new multiferroic complex oxide Bi3Fe2Mn2Ox(BFMO322) supercell and related layered structures. The state-of-the-art aberration corrected scanning transmission electron microscopy (Cs-corrected STEM) and the modified geometric phase analysis (GPA) have been used to characterize the self-assembled transitional layers, misfit defects, and, in particular, the biaxial lattice strain distributions. We found that not only a sufficient lattice misfit is required through substrate selection and to be preserved in initial coherent epilayer growth, but also an appropriate interfacial reconstruction is crucial for triggering the growth of the new BFMO322 supercell structure. The observation of new transitional interfacial phases behaving like coherent film layers within the critical thickness challenges the conventional understanding in existing epitaxial growth model.

Research Updates: Epitaxial strain relaxation and associated interfacial reconstructions: The driving force for creating new structures with integrated functionality

Enhanced real-time high temperature piezoelectric responses and ferroelectric scaling behaviors of MgO-doped 0.7BiFeO3-0.3BaTiO3 ceramics

Electric field and frequency dependent scaling behavior of dynamic hysteresis in relaxor-based ferroelectric 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystal

Scaling behavior of dynamic hysteresis of PMN-PT relaxor ferroelectric ceramics near the morphotropic phase boundary

The dynamic hysteresis and scaling behavior of unpoled 0.96(Bi0.5Na0.5)TiO3-0.04BiAlO3 lead-free relaxor ceramics were investigated through the evolution of the hysteresis loops at a wide frequency (f) and electric-field amplitude (Eo) range. The variation of the hysteresis area ⟨A⟩ and remanent polarization Pr clearly suggested three stages of polarization reversal with increasing external electric fields. It was found that the dynamic hysteresis area in the low-Eo and high-Eo regions followed the power law relationships: 〈 A 〉 ∝ f − 0.14 E o 3.30 (Eo ≤ 5.0 kV/mm) and 〈 A 〉 ∝ f 0.064 E o − 0.6 E o 1.65(Eo ≥ 6.2 kV/mm), respectively. Those power-law functions did not fit in the second stage (5.0 kV/mm < Eo < 6.2 kV/mm), where different numbers of polar nanoregions or nanodomains can be activated and transformed into macrodomains. The polarization mechanisms of above mentioned three stages were ascribed to the domain wall motion, then the formation of microdomains within the disordered nanodomains or polar...

Scaling behavior for (Bi0.5Na0.5)TiO3 based lead-free relaxor ferroelectric ceramics

The scaling behaviors of dynamic ferroelectric hysteresis in the relaxor ferroelectric 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 (PMNT67/33) ceramics near the morphotropic phase boundary (MPB) and other PMNT systems out of MPB region were investigated. The scaling relation of hysteresis area 〈A〉 against frequency f and field amplitude E0 for minor loops takes the form of 〈A〉∝f−0.2391E04.8779; while for the saturated loops, it is 〈A〉∝f 0.0401E00.5722. The scaling relations of PMNT67/33 ceramics are significantly different from those of other ferroelectrics, and the results of the analysis indicate that domain reversal in it is much more sensitive to the change of E0 at low electric field and responses more quickly to f at high electric field than other normal ferroelectrics. The coexistence of rhombohedral (R), monoclinic (M) and tetragonal (T) phases near the MPB and the polar nanoregions seems to play the key role in the dynamic behavior of the domain reversal in relaxor PMNT67/33 ceramics.

Scaling behavior of dynamic hysteresis in relaxor ferroelectric 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 ceramics

Three types of dissociated misfit dislocations (MDs) in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3 have been studied by high-resolution transmission electron microscopy. First, a MD with b=[101] dissociates into two edge partials and results in the incline of film lattice. Second, a [110] MD is split into two (1/2)[110] partials of mixed character. In the third case, a [110] MD of mixed character is composed of three partials which are reacted with two (1/2)⟨110⟩ stacking faults. Neither of the three types of dissociation reactions has been reported before for MDs in perovskite thin films.

Three types of dissociated misfit dislocations in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3

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Scaling behavior of dynamic hysteresis in relaxor ferroelectric 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 ceramics

Three types of dissociated misfit dislocations in epitaxial Ba0.3Sr0.7TiO3 thin films grown on (001) LaAlO3