Abstract Ion accelerators have demonstrated tremendous versatility in their research applications throughout several decades. Starting predominantly as nuclear physics tools, they subsequently provided novel insights into fundamental atomic physics. Nowadays small and medium size accelerators are routinely employed in several branches of materials science. As research questions increasingly drive the need for analyses and material modification experiments performed in-situ and/or in-operando, facilities must adapt to service such a need. In this work, we highlight capabilities for in-situ and in-operando composition depth profiling and materials modification, developed with instrumentation at the Tandem Laboratory at Uppsala University. An overview of available ion sources and accelerators is given. We then exemplify the specific capabilities of the available end stations for materials synthesis, sample modification and device operation either during simultaneous ion beam based characterization or with such characterization performed in-situ before and after the application of various modification steps. Describing specific recent examples and potential future applications, we illustrate the impact of the present national research infrastructure. 

Ion beam tools for nondestructive in-situ and in-operando composition analysis and modification of materials at the Tandem Laboratory in Uppsala

Electronic stopping has been investigated experimentally for slow ${\text{H}}^{+}$ and ${\text{He}}^{+}$ ions $(vl0.6\text{ }\text{a}\text{.u}\text{.})$ in polycrystalline Au and Cu, by means of time-of-flight low-energy ion scattering. Measurements were performed in backscattering geometry using polycrystalline films of several nanometers thickness; high-resolution Rutherford backscattering spectrometry was used for precise thickness calibration $(l4%)$. Absolute stopping cross-section data for Cu and Au were obtained down to $v\ensuremath{\sim}0.07\text{ }\text{a}\text{.u}\text{.}$ Both Au and Cu exhibit a rather sharp, distinctive threshold velocity of $\ensuremath{\sim}0.18\text{ }\text{a}\text{.u}\text{.}$ for excitation of $d$ electrons by ${\text{H}}^{+}$ and ${\text{He}}^{+}$. Below this threshold, projectiles interact exclusively with $s$ electrons.

Electronic stopping of low-energy H and He in Cu and Au investigated by time-of-flight low-energy ion scattering

Following the IAEA Technical Meeting on “Advanced Methodologies for the Analysis of Materials in Energy Applications Using Ion Beam Accelerators”, this paper reviews the current status of ion beam analysis techniques and some aspects of ion-induced radiation damage in materials for the field of materials relevant to fusion. Available facilities, apparatus development and future research options and challenges are presented and discussed. The analysis of beryllium and radioactivity-containing samples from future experiments in JET or ITER represents not only an analytical but also a technical challenge. A comprehensive list of the facilities, their current status, and analytical capabilities comes alongside detailed descriptions of the labs. A discussion of future issues of sample handling and the current status of facilities at JET complete the technical section. To prepare the international ion beam analysis community for these challenges, the IAEA technical meeting concludes the necessity for determining new nuclear reaction cross-sections and improving the inter-laboratory comparability by defining international standards and testing these via a round-robin test.

/pdf/ion-beam-analysis-of-fusion-plasma-facing-materials-and-7rh0ymb6wu.pdf

Ion beam analysis of fusion plasma-facing materials and components : facilities and research challenges

Electronic stopping and ion-induced electron emission during the interaction of slow $(vl0.1\text{ }\text{a}\text{.u}\text{.})$ ${\text{H}}^{+}$ and ${\text{D}}^{+}$ ions with polycrystalline Au targets have been investigated. Electronic stopping is deduced from time-of-flight low-energy ion scattering measurements in backscattering geometry using polycrystalline films of several nanometers thick. Current measurements are performed to determine the ion-induced electron emission yield. Both in electronic stopping and in ion-induced electron emission we find a rather sharp, distinctive threshold velocity of $\ensuremath{\sim}0.19\text{ }\text{a}\text{.u}\text{.}$ for specific excitation and emission of $5d$ electrons. Below this threshold the projectiles interact exclusively with the $6s$ electrons.

Electronic interaction of very slow light ions in Au: Electronic stopping and electron emission

In recent energy loss measurements, band structure effects in electronic stopping have been observed for materials with finite excitation thresholds, for example, noble metals such as Cu and Au. To further investigate the influence of the position of the $d$ band relative to the Fermi edge, electronic stopping of hydrogen and helium ions in Ag and Pt was determined. For Ag, the electronic stopping power exhibits a velocity dependence similar to Cu and Au. No particular effect due to the comparatively large $d$-band offset in Ag is found. In the case of Pt, the electronic stopping power is virtually velocity proportional for H${}^{+}$ ions and exhibits a distinct velocity dependence for He${}^{+}$ ions. For hydrogen the results are compatible with modeling the conduction band as a free electron gas with an energy-dependent effective number of electrons. For He${}^{+}$, however, the observed effects point towards an additional energy loss mechanism, e.g., by charge-exchange processes.

Role of d electrons in electronic stopping of slow light ions

ACOLISSA: a powerful set-up for ion beam analysis of surfaces and multilayer structures

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ACOLISSA: a powerful set-up for ion beam analysis of surfaces and multilayer structures