Optoelectronic materials doped with Er atoms are receiving widespread attentions due to their impact on optical communication systems operating at 1.54 μm. Optical amplifiers based on Er-doped fibers have demonstrated major improvements in link distance, data rates and reduced needs for signal regeneration. III–V semiconductors doped with Er offer the prospect of very stable, temperature-insensitive, laser diodes emitting at 1.54 μm. This paper provides a review of the luminescence characteristics of III–V semiconductors doped with Er atoms. Aspects of Er incorporation in the III–V crystal host, photoluminescence properties, and prototype electroluminescent devices are addressed. Details of some of the first observations of photoluminescence of Er atoms in III–V nitride semiconductors, in particular GaN epilayers, are discussed. The GaN epilayers were optically excited using an argon-ion laser and spectra, centered at 1.54 μm, were observed at 6, 77 and 300 K. The spectra display many of the allowed transitions typical of the Er 3+ configuration and are nearly as intense at room temperature as at 77K. This result indicates that the wide bandgap III–V semiconductors may be ideal host materials for Er-doped electroluminescent devices.

Luminescence properties of erbium in III–V compound semiconductors

This article investigates the structure of an Er luminescence center in GaAs by using its intra‐4f‐shell luminescence spectrum as an atomic probe to identify the atomic configuration. This Er center is formed in GaAs by metalorganic chemical vapor deposition with O codoping and the center shows a high efficiency and a sharp luminescence spectrum under above‐band‐gap photoexcitation. A single luminescence line in the spectrum of a GaAs:Er,O splits into more than eight lines in the spectrum of Al0.01Ga0.99As:Er,O. This drastic change due to the addition of 1% Al can be explained by assuming that, because of the high tendency of Al atoms to react with O atoms, the Al atoms preferentially occupy the nearest‐neighbor Ga sites of two O atoms, both of which are coupled with the Er atom. Based on the luminescence spectra and additional experiments of Rutherford backscattering and secondary ion mass spectroscopy, we propose that the structure of the Er luminescence center under study is Er occupying the Ga sublattice with two O atoms most likely located at the nearest‐neighbor As sites. An Er‐related spectrum of GaAs0.97P0.03:Er,O can also be understood based on this model if the chemical difference of Al and P is taken into account.

Atomic configuration of the Er-O luminescence center in Er-doped GaAs with oxygen codoping

GaAs and GaAlAs double‐heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for injection currents as low as 0.8 mA/cm2 and an external quantum efficiency of 10−6 has been found at 300 K. Preliminary data concerning the energy transfer from the injected carriers to the rare earth are provided.

1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy

A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.

Method for producing a semiconductor device

Various uses of organolanthanide complexes in materials science are reviewed. The most advanced application involves doping of III—V semiconductors using substituted tris(cyclopentadienyl)lanthanide complexes as precursors. Major efforts have been made to develop volatile liquid organolanthanides by introducing suitable substituents on the cyclopentadienyl rings. Lanthanide organometallics have also been demonstrated to be useful MOCVD precursors for the deposition of lanthanide oxide thin films.

Organolanthanides in Materials Science

Er doping of GaAs, AlGaAs and quantum wells (QW) has been achieved by MBE. A new type of Er3+ centre is observed in AlGaAs and QW structures, which is characterised by a main peak at 1.565μ at 4.5 K. At 300 K, the main peak is always at 1.54μ. In the case of QW structures, its linewidth goes down to only 1 meV and it is surrounded by up to 16 less intense peaks.

Intense and sharply structured 1.54μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBE

Gallium nitride films were grown on (0001) sapphire substrates by chemical beam epitaxy (CBE) using triethylgallium (TEGa) and ammonia (NH 3 ) precursors. Prior to the GaN epilayer growth at 850°C, a thin GaN buffer layer was deposited at 560°C. Structural and optical properties of the epilayers were investigated as a function of the anneal treatment of the buffer layer. Annealing of the buffer in NH 3 up to 900°C increases the roughness of the surface, resulting in a epilayer with higher crystallinity. Heating the buffer to 900°C results in partial desorption of the film leaving small grains on an exposed substrate. While the epitaxy on this thin buffer is two-dimensional the resulting surface consists of a hexagonal tile-structure. The level of unintentional carbon doping is high in all films, although the growth conditions need further optimization. CBE may become a promising candidate for the growth of nitride films only if the carbon incorporation is not an inherent problem of the technique.

Chemical beam epitaxy of GaN on (0001) sapphire substrate

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

C. Grattepain

Author Tools

Chat about Author

Papers

Intense and sharply structured 1.54μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBE

Chemical beam epitaxy of GaN on (0001) sapphire substrate