Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.

A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

Silicon-Carbide (SiC) devices with superior performance over traditional silicon power devices have become the prime candidates for future high-performance power electronics energy conversion. Traditional device packaging becomes a limiting factor in fully realizing the benefits offered by SiC power devices, and thus, improved and advanced packaging structures are required to bridge the gap between SiC devices and their applications. This paper provides a review of the state-of-art advanced module packaging technologies for SiC devices with the focuses on module layout, packaging material system, and module integration trend, and links these packaging advancements to their impacts on the SiC device performances. Through this review, the paper discusses main challenges and potential solutions for SiC modules, which is critical for future SiC applications.

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A review of SiC power module packaging: Layout, material system and integration

For decades soldering has been the technology of choice in die bonding. However, due to worldwide health protection regulations, the most common solder alloys, which contain lead, have been banned. Furthermore, standard solders cannot fulfil the reliability requirements of future power electronic devices. New interconnection technologies have to be developed. One of them is pressure sintering (p=30‥50 MPa) of silver flakes below 300 °C. It forms a strong, highly electrically and thermally conductive bond. In order to lower the level of pressure, silver nanoparticles can be used. Shear tests have shown that even 5 s of sintering, a temperature of 225 °C, or a pressure as low as 2 MPa is sufficient to generate bonds comparable to solder and high pressure sinter joints if the remaining parameters (p, t and T, respectively) are set correctly. However, strength is only a necessary criterion as aging comes into play. Therefore, reliability tests using thermal cycling and power cycling were run. These returned superior reliability of the sintered samples. 160 million of the power cycles between +45 and +175 °C run in this work can be extrapolated using a Coffin-Manson model. Solder joints failed at about 40,000 cycles.

Reliability assessment of sintered nano-silver die attachment for power semiconductors

Microstructural studies and bonding strength of pressureless sintered nano-silver joints on silver, direct bond copper (DBC) and copper substrates aged at 300 °C

Sintered silver joint is a porous silver that bonds a semiconductor die to the substrate as part of the packaging process. Sintered Ag is one of the few possible bonding methods to fulfill the operating conditions of wide band-gap (WBG) power device technologies. We review the current technology development of sintered Ag as a bonding material from the perspective of patents filed by various stakeholders since late 1980s. This review addresses the formulation of sintered pastes (i.e., nano-Ag, hybrid Ag, and micron Ag fillers), innovations in the process and equipment to form this Ag joint. This review will provide the insights and confidence to engineers, scientists from universities and industry as well as investors who are developing and commercializing the sintered Ag as a bonding material for microelectronic packaging. [DOI: 10.1115/1.4033069]

Identifying the Development State of Sintered Silver (Ag) as a Bonding Material in the Microelectronic Packaging Via a Patent Landscape Study

New fields of high power inverter systems such like windmills, hybrid cars, hybrid trucks, and off road vehicles require new ways of power electronics integration and packaging. The requirements in size, weight, reliability, durability, ambient temperature, and environment are driving the operation temperatures of power electronics beyond the limits of today's industrial applications. In industrial power modules solder and bond wires are still the standard joining technologies of power dies. These technologies are reaching their reliability limits if die temperatures are pushed above 135°C. In this paper the authors will discuss how the environmental conditions of applications drive silicon power device selection and packaging technologies. Extreme cooling conditions and ultra high power densities require a package design that needs to work on the thermal and electrical limits of the components without making any compromise in reliability and durability. The low temperature sinter technology can extend the power and thermal cycling capabilities of modern power modules to the values that are required for industrial and automotive applications. Next to the reliability data also a proposal for a high volume manufacturing process of the low temperature sinter technology of multi chip modules will be presented.

Low temperature sinter technology die attachment for power electronic applications

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Low temperature sinter technology die attachment for power electronic applications