C. Gmachl
Alcatel-Lucent
48 Papers
567 Citations
C. Gmachl is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 17, co-authored 48 publications. Previous affiliations of C. Gmachl include University of Innsbruck & Vienna University of Technology.
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Papers
Methane concentration and isotopic composition measurements with a mid-infrared quantum-cascade laser.
Anatoliy A. Kosterev,Robert F. Curl,Frank K. Tittel,C. Gmachl,Federico Capasso,Deborah L. Sivco,James N. Baillargeon,Albert L. Hutchinson,A.Y. Cho +8 more
TL;DR: A quantum-cascade laser operating at a wavelength of 8.1 micrometers was used for high-sensitivity absorption spectroscopy of methane (CH4) and the content of 13CH4 and CH3D species in a CH4 sample was determined.
Free-space optical transmission of multimedia satellite data streams using mid-infrared quantum cascade lasers
Rainer Martini,Clyde G. Bethea,Federico Capasso,C. Gmachl,Roberto Paiella,Edward A. Whittaker,Harold Y. Hwang,Deborah L. Sivco,James N. Baillargeon,A.Y. Cho +9 more
TL;DR: In this article, experimental results for an optical free-space high-speed link using direct modulated mid-infrared (DMIR) quantum cascade (QC) lasers are presented.
102
Application of balanced detection to absorption measurements of trace gases with room-temperature, quasi-cw quantum-cascade lasers
D. M. Sonnenfroh,Wilson T. Rawlins,M. G. Allen,C. Gmachl,Federico Capasso,A. L. Hutchinson,Deborah L. Sivco,James N. Baillargeon,A.Y. Cho +8 more
TL;DR: Preliminary results on the performance of a laser absorption spectrometer that uses a QC laser operating at room temperature in a quasi-cw mode in conjunction with balanced ratiometric detection are reported.
102
High-performance superlattice quantum cascade lasers
Federico Capasso,Alessandro Tredicucci,Alessandro Tredicucci,Alessandro Tredicucci,C. Gmachl,C. Gmachl,C. Gmachl,Deborah L. Sivco,Albert L. Hutchinson,A.Y. Cho,Gaetano Scamarcio +10 more
TL;DR: In this article, two laser designs that avoid doping of the active regions without causing electric-field-induced localization of the superlattice states are presented, along with experimental results.
90
Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 μm intersubband transitions
TL;DR: In this paper, high-quality superlattice structures of GaN/AlGaN were grown on sapphire substrates by molecular beam epitaxy and in situ monitoring of the growth rate was achieved using pyrometric interferometry.
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