Significant opportunities are emerging for optical interconnections at the board, module, and chip level if compact, low loss, high data rate optical interconnections can be integrated into these electrical interconnection systems. This paper describes an integration process for creating optical interconnections which can be integrated in a postprocessing format onto standard boards, modules, and integrated circuits. These optical interconnections utilize active thin-film optoelectronic components embedded in waveguides, which are integrated onto or into the interconnection substrate, thus providing an electrical output on the substrate from an optical interconnection. These embedded optical interconnections are reported herein using BCB (Benzocyclobutene ) polymer optical waveguides in two different formats, as well as a third waveguide structure using a BCB cladding with an Ultem core. All of these waveguides were fabricated with InGaAs-based thin-film inverted metal-semiconductor-metal (I-MSM) photodetectors embedded in the waveguide layer, thus eliminating the need for beam turning elements at the output of the waveguide. These embedded interconnections have been fabricated and tested, and the coupling efficiency of the optical signals from the waveguides to the embedded photodetectors was estimated from these measurements. These measurement-based estimates are then compared to theoretical models of the coupling efficiency. Using the theoretical coupling efficiency model, variable coupling can be engineered into the interconnect design, thus enabling partial coupling for arrays of photodetectors embedded in waveguide interconnections.

/pdf/optical-interconnections-on-electrical-boards-using-embedded-4sgmmlkexy.pdf

Optical interconnections on electrical boards using embedded active optoelectronic components

The integration of InGaAs photodetectors embedded in a polymer interconnection waveguide on Si and ceramic electrical interconnection substrates has been demonstrated. The photodetector and substrate are independently fabricated and bonded, with subsequent waveguide integration. The embedding fabrication process, coupling, and bandwidth are reported at 1 Gbit/s.

Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors

As integrated circuit interconnect dimensions continue to shrink and signaling frequencies increase, interconnect performance degrades. The performance degradation is due to several factors such as power consumption, cross-talk, and signal attenuation. On-chip optical interconnects are a potential solution to these scaling issues because they offer the promise of providing higher bandwidth. In this paper, progress on the major on-chip optical building blocks will be reviewed. It will be shown that significant advances have been made in the design and fabrication of waveguides, detectors, and couplers. However, major challenges in high speed electrical to optical conversion and signaling remain.

Challenges for on-chip optical interconnects

Complementary metal-oxide-semiconductor-compatible metal-semiconductor-metal polysilicon photodiodes fabricated in a commercial 0.35-mum technology offer estimated responsivities of up to 0.35 A/W at 654 nm. An effective absorption coefficient of 0.63 dB/mum was extracted from responsivities for 5- to 10-mum-long waveguide-coupled detectors. Increasing responsivity at smaller contact spacing indicated a two-part photocurrent response, with secondary photocurrent dominating at small contact spacings and high electric fields

https://www.engr.colostate.edu/~kllear/papers/PownallPTL07.pdf

Geometry Dependence of CMOS-Compatible, Polysilicon, Leaky-Mode Photodetectors

We have fabricated different metal-silicon-metal photodetectors and characterized these devices for visible and near-infrared (IR) response. For wavelengths shorter than 1.1 μm, electron-hole pairs are generated in the Si. They are accelerated to saturation velocity and move towards the metal electrodes. For longer wavelengths, Si itself becomes transparent, but carriers are emitted from the internal semiconductor–metal interfaces. This so-called “internal photoeffect” is governed by different carrier dynamics, because “hot” electrons or holes are injected into the Si. Their significant excess energy leads to extremely fast electrical pulses. The resulting temporal response was measured with a new setup, using a Ti:sapphire laser and an optical parametric oscillator, which generates ultrafast optical pulses (170 fs) at IR wavelengths. Schottky-barrier emission from CoSi2, Cr, Ti, and Pt was investigated. A photodetector from Ti–Si–CoSi2 was excited with optical pulses of 1250 nm and showed an electrical p...

Ultrafast silicon based photodetectors

One task of the integration of optoelectronic functions with silicon devices is the construction of an optical waveguide on Si and the optical coupling of this waveguide to a silicon photodetector. We have fabricated polymeric strip waveguides on Si and demonstrate a very efficient design for the optical coupling between the polymeric waveguide and an ultrafast Si-based metal-semiconductor-metal (MSM) mesa-type photodetector. This detector uses high-quality epitaxial Si as the sensitive layer, which is sandwiched between two metallic contacts. If these MSM detectors are excited by a vertically incident free beam of /spl lambda/=840 nm and pulses of 100-fs full-width at half-maximum (FWHM), they respond with electrical pulses of 3, 5-ps length (FWHM, T=300 K).

Efficient optical coupling between a polymeric waveguide and an ultrafast silicon MSM photodiode

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Efficient optical coupling between a polymeric waveguide and an ultrafast silicon MSM photodiode