Modelling, estimation and compensation of imbalances in quadrature transceivers

There have been many demonstrations of Si and SiGe power amplifers (PAs) that have achieved good published performance. However, penetration of these technologies into the mainstream handset power amplifier market has been limited. In this paper, we review some of the state-of-the-art PA results in these technologies and discuss the performance challenges for silicon-based PAs. We also discuss some important on-going technology developments that may make these technologies more competitive for future applications. Finally, we present and discuss some power amplifer specific modeling issues that are not generally addressed in foundry offerings/design kits

Performance and Modeling of Si and SiGe for Power Amplifiers

A true enhancement-mode junction pseudomorphic HEMT (JPHEMT) with a high threshold voltage (V/sub th/) Of +05 V was developed for single-supply power amplifiers The novel JPHEMT exhibits an extremely low standby leakage current The leakage current at 25/spl deg/C is 22/spl times/10/sup -10/ A/mm and even at 85/spl deg/C is 86/spl times/10/sup -9/ A/mm It is suggested that the leakage current is the lowest among reported enhancement-mode FETs Moreover, the novel JPHEMT exhibits a high turn-on voltage (V/sub F/) of 13 V at 1 mA/mm, which is 100 mV higher than that of a conventional JPHEMT The PA module performance for 195 GHz W-CDMA systems, under conditions of V/sub DS/ of 35 V and an adjacent channel leakage power ratio (ACLR) of -37 dBc, demonstrated an output power (P/sub out/) of 265 dBm, an associated gain (Gain) of 26 dB and a power added efficiency (PAE) of 47% The standby leakage current at gate-to-source voltage (V/sub GS/) of 0 V was less than 1 /spl mu/A even at 85/spl deg/C This high RF-performance, with extremely low leakage current results, indicate that the novel JPHEMT has single-supply amplifier capability

Low standby leakage current power amplifier module made with junction PHEMT technology

This paper describes the design and measured performance of Monolithic Microwave Integrated Circuit (MMIC) power amplifier for wireless LAN applications in the 2.4GHz band. The power amplifier (PA) is designed using 0.15μm GaAs power PHEMT technology. The die size of this PA is 1.2mm × 0.7mm and this PA is also offered in 16-pin QFN package. With only 3.0 V of drain voltage (V DS ), the packaged PA exhibits an output power at 1dB gain compression (P1dB) of 14.01 dBm, Power-Added Efficiency (PAE) of 31.70% and gain of 7.51 dB, respectively. The maximum current, Imax of this packaged amplifier is 77.90mA and the power consumption for the device is 233.70mW.

A 2.4 GHz packaged power amplifier using GaAs PHEMT technology

A comprehensive overview is provided for the current state of production-scale molecular beam epitaxy (MBE) system hardware and applications as well as future directions in production-scale MBE. An introduction is provided, discussing the applications and markets for which devices are mass produced by MBE. This is compared and contrasted alongside other competing manufacturing techniques such as metalorganic chemical vapor deposition (MOCVD). The current state of production MBE hardware is also presented, with a thorough review of all critical system subassemblies and components. The design needs of the production-scale hardware are contrasted with the needs of smaller, research and development (R&D)-scale MBE systems. A number of the hardware and process challenges in scaling from typical R&D-scale MBE systems to production-scale systems are discussed along with the common techniques for mitigating these issues. Finally, a discussion of the future trends and opportunities in the production MBE is presented. We provide an overview, covering a wide range of material and device applications that are currently areas of active R&D that have the potential to evolve to large-volume production in the future. The potential and challenges of many of these new devices and applications are discussed along with due consideration to the viability of alternative techniques such as MOCVD.

Systems and technology for production-scale molecular beam epitaxy

A wide variety of semiconductor devices are used in wireless power amplifiers. The RF performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies will be reviewed and compared.

https://www.gaas.org/Digests/2003/2003PDF/2-2.pdf

RF Power Amplifiers for Cellphones

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RF Power Amplifiers for Cellphones