C. Domínguez
Spanish National Research Council
20 Papers
206 Citations
C. Domínguez is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Silicon & Oxide. The author has an hindex of 12, co-authored 20 publications.
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Papers
Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD
TL;DR: A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor synthesis (PECVD) is presented in this paper.
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Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition
M. Perálvarez,Jorge Barreto,Josep Carreras,A. Morales,Daniel Navarro-Urrios,Y. Lebour,C. Domínguez,B. Garrido +7 more
TL;DR: An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented, finding a continuous and uniform Si nanocrystal distribution and a 50% degradation rate reduction as compared to implanted structures.
Analysis of surface roughness and its relationship with photoluminescence properties of silicon-rich oxide films
TL;DR: In this paper, the relationship between surface morphology and photoluminescence (PL) spectra of silicon-rich oxide (SRO) has been studied using transmission electronic microscopy and atomic force microscopy.
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Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks
TL;DR: In this article, a field effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition is presented, which shows high power efficiency and long lifetime.
The mechanism of electrical annihilation of conductive paths and charge trapping in silicon-rich oxides
TL;DR: The electrical properties of silicon-rich oxide (SRO) films in metal-oxide-semiconductor-like structures were analysed by current versus voltage (I-V) and capacitance versus voltage (-V) techniques and the effects are ascribed to the annihilation of conductive paths created by Si-nps.
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