C. Capasso
Freescale Semiconductor
21 Papers
283 Citations
C. Capasso is an academic researcher from Freescale Semiconductor. The author has contributed to research in topics: Metal gate & Gate dielectric. The author has an hindex of 12, co-authored 21 publications.
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Papers
Challenges for the integration of metal gate electrodes
James K. Schaeffer,C. Capasso,L. R. C. Fonseca,S. Samavedam,David C. Gilmer,Yong Liang,S. Kalpat,B. Adetutu,Hsing-Huang Tseng,Y. Shiho,Alexander A. Demkov,Rama I. Hegde,W.J. Taylor,Rich Gregory,J. Jiang,E. Luckowski,M. Raymond,K. Moore,Dina H. Triyoso,D. Roan,B. E. White,Philip J. Tobin +21 more
- 13 Dec 2004
TL;DR: In this article, the integration challenges for metal gate electrodes including the presence of Fermi level pinning and the impact of interface chemistry on the effective metal work function are discussed.
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Patent
Process for forming an electronic device including a transistor having a metal gate electrode
C. Capasso,S. Samavedam,E. Verret +2 more
- 14 Nov 2006
TL;DR: In this article, the first and second gate electrodes having the same minority carrier type are associated with the first-and second-gate electrodes, respectively, for the n-channel and p-channel transistor, respectively.
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Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics
James K. Schaeffer,C. Capasso,Rich Gregory,David Gilmer,L. R. C. Fonseca,Mark Raymond,C. Happ,M. Kottke,Srikanth B. Samavedam,Philip J. Tobin,Bruce E. White +10 more
TL;DR: In this paper, the role of interface chemistry on the effective work function and device characteristics of metal gate electrodes on hafnium dioxide (HfO2) gate dielectrics in metal oxide semiconductor field effect transistors was investigated.
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Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack
H.-H. Tseng,C. Capasso,James K. Schaeffer,E.A. Hebert,Philip J. Tobin,David C. Gilmer,Dina H. Triyoso,M. Ramon,S. Kalpat,E. Luckowski,W.J. Taylor,Y. Jeon,Olubunmi O. Adetutu,Rama I. Hegde,R. Noble,M. Jahanbani,C. El Chemali,B. E. White +17 more
- 13 Dec 2004
TL;DR: In this article, a novel stress relieved preoxide (SRPO) followed by ALD of HfO/sub 2/ reduces the local charge density near the gate edge and short channel threshold voltage instability.
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