The wavelength 1550 nm is widely used in fiber-optic communications and imaging systems. Avalanche photodiodes (APDs) offer high sensitivity for detecting this wavelength. However, the noise caused by the stochastic nature of the impact ionization gain mechanism can temper the benefit of amplifying the signal. Here, we report a separate absorption, charge, and multiplication APD that uses a two-step staircase multiplication region exhibiting a near-unity excess noise factor. At a gain of four, the excess noise factor is approximately three times lower than conventionally used InGaAs/InP separate absorption, charge, and multiplication APDs. This improved excess noise coupled with 1550-nm operation offers the potential for enhanced performance in several key application areas. 

Separate absorption, charge, and multiplication staircase avalanche photodiodes

We have theoretically and experimentally demonstrated the feasibility of achieving ultra-low dark current in CpBnn type detectors based on a double-barrier InAs/GaSb/AlSb type-II superlattice. By employing a structure that separates the absorption region and depletion region, the diffusion, recombination, tunneling, and surface dark currents of the photodetector (PD) have been suppressed. Experimental validation has shown that a detector with a diameter of 500 µm at a bias voltage of −0.5 V exhibits a dark current density of 2.5 × 10−6 A/cm2 at the operating temperature of 300 K. The development of PD with low dark current has paved the way for applications with high demands for low noise in the fields of gravitational wave detection and astronomical observation.

Low dark current Sb-based short-wavelength infrared photodetector

: Mid-IR is a useful wavelength range for both science and military applications due to its low atmospheric attenuation and ability to be used for passive detection. However, many solutions for detecting light in this spectral region need to be operated at cryogenic temperatures as their required narrow bandgaps suffer from carrier recombination and band-to-band tunneling at room temperature leading to high dark currents. These problems can be alleviated by using a separate absorption, charge, and multiplication avalanche photodiode. We have recently demonstrated such a device with a 3-µm cutoff using Al 0.15 In 0.85 As 0.77 Sb 0.23 , as the absorber, grown on GaSb. Here we investigate Al 0.15 In 0.85 As 0.77 Sb 0.23 as a simple PIN homojunction and provide metrics to aid in future designs using this material. PL spectrum measurements indicate a bandgap of 2.94 µm at 300 K. External quantum efficiencies of 39% and 33% are achieved at 1.55 µm and 2 µm respectively. Between 180 K and 280 K the activation energy is ∼ 0.22 eV, roughly half the bandgap of Al 0.15 In 0.85 As 0.77 Sb 0.23 , indicating thermal generation is dominant.

Narrow bandgap Al 0.15 In 0.85 As 0.77 Sb 0.23 for mid-infrared photodetectors

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Narrow bandgap Al 0.15 In 0.85 As 0.77 Sb 0.23 for mid-infrared photodetectors