C. Awo-Affouda
State University of New York System
19 Papers
50 Citations
C. Awo-Affouda is an academic researcher from State University of New York System. The author has contributed to research in topics: Magnetization & Ferromagnetism. The author has an hindex of 10, co-authored 19 publications. Previous affiliations of C. Awo-Affouda include United States Naval Research Laboratory.
Chat about Author
Papers
Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry
O.M.J. van 't Erve,Aubrey T. Hanbicki,M. Holub,Connie H. Li,C. Awo-Affouda,Phillip E. Thompson,Berend T. Jonker +6 more
TL;DR: In this article, electrical injection, detection, and magnetic field modulation of lateral diffusive spin transport through silicon using surface contacts is presented, where Fe∕Al2O3 tunnel barrier contacts are used to create and analyze the flow of pure spin current in a silicon transport channel.
316
Observation of crystallite formation in ferromagnetic Mn-implanted Si
C. Awo-Affouda,Martin Bolduc,Mengbing Huang,F. Ramos,Kathleen Dunn,Brad Thiel,Gabriel Agnello,Vincent LaBella +7 more
TL;DR: Mn-implanted Si was investigated using transmission electron microscopy to gain insight into the structure of the implanted region as mentioned in this paper, which indicated that the most prominent lattice spacing of the crystallites is 2.15A.
48
Investigation of the structural properties of ferromagnetic Mn-implanted Si
TL;DR: The structural properties of Si crystals that were made ferromagnetic through Mn-ion implantation are studied in this article, where the Curie temperature for all samples was found to be greater than 400 K. After annealing, a pronounced redistribution of Mn is observed in the depth profiles as measured through SIMS profiling.
15
Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)
TL;DR: In this paper, a Co film was deposited on the GaAs(001) surface by using an e-beam evaporation method and the thickness of the Co films were measured by using x-ray reflectivity and Rutherford backscattering.
12