The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

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Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

Solution-processed metal-oxide thin films based on high dielectric constant (k) materials have been extensively studied for use in low-cost and high-performance thin-film transistors (TFTs). Here, scandium oxide (ScOx) is fabricated as a TFT dielectric with excellent electrical properties using a novel water-inducement method. The thin films are annealed at various temperatures and characterized by using X-ray diffraction, atomic-force microscopy, X-ray photoelectron spectroscopy, optical spectroscopy, and a series of electrical measurements. The optimized ScOx thin film exhibits a low-leakage current density of 0.2 nA cm−2 at 2 MV cm−1, a large areal capacitance of 460 nF cm−2 at 20 Hz and a permittivity of 12.1. To verify the possible applications of ScOx thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, they were integrated in both n-type InZnO (IZO) and p-type CuO TFTs for testing. The water-induced full oxide IZO/ScOx TFTs exhibit an excellent performance, including a high electron mobility of 27.7 cm2 V−1 s−1, a large current ratio (Ion/Ioff) of 2.7 × 107 and high stability. Moreover, as far as we know it is the first time that solution-processed p-type oxide TFTs based on a high-k dielectric are achieved. The as-fabricated p-type CuO/ScOx TFTs exhibit a large Ion/Ioff of around 105 and a hole mobility of 0.8 cm2 V−1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution-processed p-type TFTs, which represents a great step towards the achievement of low-cost, all-oxide, and low-power consumption CMOS logics.

Water-induced scandium oxide dielectric for low-operating voltage n- and p-type metal-oxide thin-film transistors

Abstract Transparent electronics has attracted much attention and been widely studied for next-generation high-performance flat-panel display application in the past few years, because of its excellent electrical properties. In display application, thin film transistors (TFTs) play an important role as the basic units by controlling the pixels. Among them, oxide-based TFTs have become promising candidates and gradually replaced the conventional amorphous and polycrystalline silicon TFTs, due to high mobility, good transparency, excellent uniformity and low processing temperature. Even though n-type oxide TFTs have shown high device performance and been used in commercial display application, p-type oxide TFTs with the equal performance have been rarely reported. Hence, in this paper, recent progress and challenges in p-type oxide-based TFTs are reviewed. After a short introduction, the TFT device structure and operation are presented. Then, recent developments in p-type oxide TFTs are discussed in detail, with the emphasis on the potential p-type oxide candidates as copper oxide, tin oxide and nickel oxide. Moreover, miscellaneous applications of p-type oxide TFTs are also presented. Despite this, the performance of p-type oxide TFTs still lags behind, as compared with that of n-type counterparts. Thus, the current issues and challenges of p-type oxide TFTs are briefly discussed.

/pdf/progress-and-challenges-in-p-type-oxide-based-thin-film-105jxb2tcp.pdf

Progress and challenges in p-type oxide-based thin film transistors

We investigate the effects of ambient atmosphere on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs), and present the effective method for the passivation of SnO TFTs using a SU-8 organic layer. The experimental data shows that the SnO TFTs without a passivation layer suffer from the electrical performance degradation under humid environments, which implies that the formation of the passivation layer is necessary in p-type SnO TFTs for the stable operation of the devices. The SU-8 organic layer was successfully incorporated as a passivation layer of SnO TFTs. The SnO TFTs with a SU-8 passivation layer exhibit very similar transfer characteristics with those without a passivation layer, and show much improved long-term durability and bias stress stability compared with the SnO TFTs without a passivation layer under air environments.

Improvement of Long-Term Durability and Bias Stress Stability in p-Type SnO Thin-Film Transistors Using a SU-8 Passivation Layer

Optical properties of sputter deposited nanocrystalline CuO thin films

In this study, p-channel amorphous tin oxide thin-film transistors (TFTs) were fabricated. A vacuum thermal evaporation method with an SnO powder source was used to deposit the tin-oxide active layer. Thermal annealing in N 2 and oxygen plasma treatment were used as post-deposition treatments to obtain p-channel switching capabilities from the tin-oxide active layer. We have achieved a field effect mobility of 5.59 cm 2V -1s -1 with these TFTs. With their high mobility and low-cost fabrication process that is applicable to large-sized devices, they represent an advance toward practical oxide semiconductor technology.

Fabrication of p-Channel Amorphous Tin Oxide Thin-Film Transistors Using a Thermal Evaporation Process

Using vacuum thermal evaporation combined with post-deposition annealing, we obtained p-type copper oxide films with a hole concentration on the order of 1016 cm−3 and Hall mobility of over 5 cm2 V−1 s−1. These properties are in the range that can be used for an active layer of p-channel thin film transistors. We used air thermal annealing to convert n-type conduction of as-deposited films to p-type conduction, and determined that vacuum thermal annealing did not change the n-type conductivity of the as-deposited films.

P-type Copper Oxide Thin Films Deposited by Vacuum Thermal Evaporation

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Fabrication of p-Channel Amorphous Tin Oxide Thin-Film Transistors Using a Thermal Evaporation Process

P-type Copper Oxide Thin Films Deposited by Vacuum Thermal Evaporation