Circuit parameters and configuration are very important when studying the synergistic effects total dose/SET. We explore a method combining dynamic parameter measurement and spectrum analysis which lead to a better understanding of this complex phenomenon. In this paper symbolic circuit analysis is used to obtain the relationship between input, output and noise injection due to photocurrent generation in the form of a rational function using symbolic variables in the complex frequency domain. This simulation technique was able to predict the impact of (i) total dose level, (ii) circuit parameters, and (iii) the injected energy on the ASET shapes. Basic mechanisms as field collapse and collection efficiency were also predicted and assessed.

Impact of Cumulative Irradiation Degradation and Circuit Board Design on the Parameters of ASETs Induced in Discrete BJT-based Circuits

The propagation of Analog Single Event Transients (ASETs) to multiple outputs of Bipolar Junction Transistor (BJTs) Integrated Circuits (ICs) is reported for the first time. The results demonstrate that ASETs can appear at several outputs of a BJT amplifier or comparator as a result of a single ion or single laser pulse strike at a single physical location on the chip of a large-scale integrated BJT analog circuit. This is independent of interconnect cross-talk or charge-sharing effects. Laser experiments, together with SPICE simulations and analysis of the ASET’s propagation in the s-domain are used to explain how multiple-output transients (MOTs) are generated and propagate in the device. This study demonstrates that both the charge collection associated with an ASET and the ASET’s shape, commonly used to characterize the propagation of SETs in devices and systems, are unable to explain quantitatively how MOTs propagate through an integrated analog circuit. The analysis methodology adopted here involves combining the Fourier transform of the propagating signal and the current-source transfer function in the s-domain. This approach reveals the mechanisms involved in the transient signal propagation from its point of generation to one or more outputs without the signal following a continuous interconnect path.

Measurement and Analysis of Multiple Output Transient Propagation in BJT Analog Circuits

The bipolar voltage comparator LM139 were exposed to ionizing radiation with a high-dose-rate of 10 rad(Si)/s and a low-dose-rate of 0.01 rad(Si)/s; then, pulsed laser single-event-transient (SET) testing was performed. The experimental results show that the SET phenomenon of LM139 after low-dose-rate irradiation of 0.01 rad(Si)/s is obviously different from the SET phenomenon of LM139 after high-dose-rate irradiation of 10 rad(Si)/s. After irradiation with the low-dose-rate, the comparator LM139 has Enhanced Low Dose Rate Sensitivity (ELDRS) in terms of the total dose effect, and the SET was further influenced by ELDRS. The greater gain degradation of the internal transistor in LM139 with low-dose-rate irradiation is the direct cause of this phenomenon.

Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139

The propagation of Analog Single Event Transients (ASETs) to multiple outputs of Bipolar Junction Transistor (BJTs) Integrated Circuits (ICs) is reported for the first time. The results demonstrate that ASETs can appear at several outputs of a BJT amplifier or comparator as a result of a single ion or single laser pulse strike at a single physical location on the chip of a large-scale integrated BJT analog circuit. This is independent of interconnect cross-talk or charge-sharing effects. Laser experiments, together with SPICE simulations and analysis of the ASET's propagation in the s-domain are used to explain how multiple-output transients (MOTs) are generated and propagate in the device. This study demonstrates that both the charge collection associated with an ASET and the ASET's shape, commonly used to characterize the propagation of SETs in devices and systems, are unable to explain quantitatively how MOTs propagate through an integrated analog circuit. The analysis methodology adopted here involves combining the Fourier transform of the propagating signal and the current-source transfer function in the s-domain. This approach reveals the mechanisms involved in the transient signal propagation from its point of generation to one or more outputs without the signal following a continuous interconnect path.

Development of a new methodology to model the synergistic effects between TID and ASETs

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Development of a new methodology to model the synergistic effects between TID and ASETs