Bryan Szeto
National Institute for Nanotechnology
7 Papers
8 Citations
Bryan Szeto is an academic researcher from National Institute for Nanotechnology. The author has contributed to research in topics: Wafer & Nanorod. The author has an hindex of 6, co-authored 7 publications. Previous affiliations of Bryan Szeto include National Research Council.
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Papers
Musical molecules: the molecular junction as an active component in audio distortion circuits.
Adam Johan Bergren,Lucas Zeer-Wanklyn,Lucas Zeer-Wanklyn,Mitchell Semple,Nikola Pekas,Bryan Szeto,Richard L. McCreery,Richard L. McCreery +7 more
TL;DR: Molecular junctions that have a non-linear current-voltage characteristic consistent with quantum mechanical tunneling are demonstrated as analog audio clipping elements in overdrive circuits widely used in electronic music, particularly with electric guitars.
Robust All-Carbon Molecular Junctions on Flexible or Semi-Transparent Substrates Using "Process-Friendly" Fabrication.
Amin Morteza Najarian,Amin Morteza Najarian,Bryan Szeto,Ushula M. Tefashe,Ushula M. Tefashe,Richard L. McCreery,Richard L. McCreery +6 more
TL;DR: EC on Au provides a platform for fabrication and operation of chemically stable, optically and electrically functional molecules on rigid or flexible materials and the relative ease of processing and the robustness of molecular junctions incorporating eC layers should help address the challenge of economic fabrication of practical, flexible Molecular junctions for a potentially wide range of applications.
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Microfabrication and integration of diazonium-based aromatic molecular junctions.
TL;DR: Parallel fabrication, thermal stability, and high yield are required for practical applications of molecular electronics, and the reported results provide important steps toward integration of molecular electronic devices with commercial processes and devices.
Control of Alq3 Wetting Layer Thickness via Substrate Surface Functionalization
TL;DR: A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates, likely caused by an interfacial energy mismatch between the substrate and Al Q3.
8
Patent
Devices with flat conducting surfaces
Richard L. McCreery,Amin Morteza-Najaran,Bryan Szeto +2 more
- 26 May 2016
TL;DR: In this paper, an electronic device may have one or more intermediate layers between contacts each comprising an e-beam deposited carbon (e-Carbon) layer and a metal layer.